FQA13N80-F109 MOSFET Power Electronics TO-3P-3 Transistor High Power Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
FQA13N80-F109 is a high-performance, high-temperature, low-loss N-channel MOSFET that features an advanced design for maximum power density and superior efficiency. The device is housed in a TO-3P-3 package which makes it suitable for high-temperature applications. It has a drain-source voltage rating of 800V and a drain current rating of 13A.
It also has a low on-resistance of 0.7 ohms, a low gate charge of 11nC, and a fast switching speed. The FQA13N80-F109 is an ideal choice for power electronics applications such as solar inverters, motor drives, and DC-DC converters. It provides improved efficiency, power density, and reliability in these applications.
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