FDMS86200 MOSFET Power Electronics
High Performance Low On-Resistance High Reliability High Efficiency
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The FDMS86200 is an advanced, low-voltage N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) power electronics device with an integrated source connection, optimized for high-density applications. This device features an extremely low on-resistance profile and an exceptionally low gate charge, making it ideal for high switching frequency, high current applications. It is available in a small, 4-pin package, making it suitable for space-constrained applications. The improved efficiency and power density of this device enables customers to reduce their system cost and size. In addition, its excellent thermal performance ensures reliable operation and long term reliability.
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