FDMT80080DC MOSFET Power Electronic
80V 800A N-Channel Trench Low On-Resistance 8-PowerVDFN Package
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMT80080DC is an 8-PowerVDFN package N-channel MOSFET Power Electronics device developed by STMicroelectronics. This device is specifically optimized for low voltage applications and offers an excellent combination of low on-resistance, low gate charge, and fast switching speed. It has a drain-source breakdown voltage of 800V, a maximum drain current of 80A, and a maximum drain-source on-state resistance of 8.2mΩ. Additionally, it features an ESD protection of up to 2kV, enabling reliable operation in harsh environment. Furthermore, it features a wide operating temperature range of -55°C to 175°C and is available in a small 8-PowerVDFN package for space-saving designs. With its excellent features, the FDMT80080DC is an ideal choice for high-efficiency power electronics applications, such as motor control, lighting, and power management.
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