FDV303N MOSFET Power Electronics
TO-236-3 High Performance Durability Power Electronics Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The FDV303N is a N-channel enhancement mode field effect transistor
(MOSFET) housed in a TO-236-3 package. It provides excellent
performance for power switching applications in most DC-DC
converters, motor control and other high frequency switching
circuits.
The FDV303N has a low on-state resistance (Rdson) of 0.15Ω and a
low gate charge of 3.4nC for fast switching. It also features a
high operating voltage of 30V, a low threshold voltage of 2.8V, a
continuous drain current of 10A, and a pulsed drain current of 35A.
The FDV303N is RoHS compliant and is designed to meet the
requirements of UL 746C and EN 60335-1. It also has an operating
temperature range of -55°C to 150°C and is capable of withstanding
high surge currents. The FDV303N is designed to provide superior
performance and reliability in the most demanding applications.
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