NTMFS5C460NLT1G MOSFET Power Electronics
8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode
Supplies
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The NTMFS5C460NLT1G is a N-channel MOSFET Power Electronics device
manufactured by ON Semiconductor. It is designed to provide high
current switching and power management solutions in a wide range of
applications. The device is housed in an 8-PowerTDFN package, which
offers a low profile and is ideal for space-constrained
applications. Its advanced process technology offers fast switching
and low on-resistance for higher efficiency, reduced power losses
and improved overall system performance.
The NTMFS5C460NLT1G features an internal ESD protection diode,
which provides protection against electrostatic discharge (ESD) and
improves the reliability of the device. Its common source
configuration and low threshold voltage make it suitable for
switching, level shifting and signal conditioning applications.
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