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NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching

    Buy cheap NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching from wholesalers
     
    Buy cheap NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching from wholesalers
    • Buy cheap NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching from wholesalers
    • Buy cheap NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching from wholesalers

    NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching

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    Brand Name : onsemi
    Model Number : NTGS5120PT1G
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching

    NTGS5120PT1G MOSFET Power Electronics

    SOT-23-6 High Performance Low On Resistance High Speed Switching


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    111mOhm @ 2.9A, 10V
    Vgs(th) (Max) @ Id
    3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    18.1 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    942 pF @ 30 V
    FET Feature
    -
    Power Dissipation (Max)
    600mW (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    6-TSOP
    Package / Case

    The NTGS5120PT1G is a N-Channel MOSFET power electronics device from ON Semiconductor. This device is housed in a SOT-23-6 package and is designed to provide efficient and reliable switching performance. The NTGS5120PT1G features a maximum drain source voltage of 20 V and a maximum drain current of 1.2 A. The gate threshold voltage of this device is 2 V max and the maximum power dissipation is 300 mW. This device has an RDS (ON) of 0.2 Ω and an operating temperature range of -55 °C to 150 °C. This device is ideal for applications such as DC-DC converters, load switches and battery management systems.


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