Product Listing:
AO3416 - N-Channel Enhancement Mode MOSFET
Features:
-High density cell design for extremely low RDS(on)
-High speed switching
-Low gate charge
-Low gate resistance
-High input impedance
Specifications:
-Drain-Source Voltage (Vdss): 30V
-Continuous Drain Current (Id): 10A
-On-Resistance (Rds): 0.0015 Ohm
-Gate-Source Voltage (Vgs): 20V
-Gate Charge (Qg): 28nC
-Input Capacitance (Ciss): 1100pF
-Operating Temperature Range: -55C to 150C
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