Product Listing:
IRF3808PBF N-Channel Power MOSFET
Features:
- Low On-Resistance
- Fast Switching
- High-Voltage Capability
- Low Gate Charge
- Low Output Capacitance
- ESD Protected
Parameters:
- Drain-Source Voltage (Vdss): 500 V
- Gate-Source Voltage (Vgs): ±20 V
- Drain Current (Id): 25 A
- Drain-Source On State Resistance (Rds): 0.0043 Ω
- Maximum Power Dissipation (Pd): 75 W
- Maximum Continuous Drain Current (Id): 25 A
- Maximum Junction Temperature (Tj): 175 °C
- Maximum Transient Thermal Impedance (Zth j-c): 1.2 °C/W
-Maximum Gate-Source Voltage (Vgs): ±20 V
- Maximum Drain-Source On State Resistance (Rds): 0.0043 Ω
- Maximum Operating Frequency (f): 7 MHz
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• SKL is a Stock keeper and trade company of Electronic components
.Our branches office include China, Hong Kong, Sigapore , Canada .
Offer business, service, resourcing and information for our global
member.
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to our customers all over the world with speed and precision.
How to buy >>>
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Service >>>
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ensure that there is no quality problems.
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