SI1308EDL-T1-GE3 MOSFET Power Electronics High Performance Low
Power Consumption
Product Name: SI1308EDL-T1-GE3 N-Channel Enhancement Mode MOSFET
Product Description:
The SI1308EDL-T1-GE3 is a N-Channel Enhancement Mode
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This
MOSFET is designed for high speed switching applications, such as
DC-DC converters, motor drives, solenoid drivers, and general
purpose switching. It features low RDS(on) and low gate charge,
making it suitable for high current, low voltage power management
applications.
Product Features:
• Low RDS(on)
• Low gate charge
• High speed switching
• RoHS compliant
Product Specifications:
• Drain-Source Voltage (VDS): 30V
• Drain-Source On-State Resistance (RDS(on)): 0.0086Ω
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 7.2A
• Maximum Power Dissipation (PD): 2.4W
• Operating Junction Temperature (TJ): -55°C
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