SIHG33N60EF-GE3 600V N-Channel Power MOSFET
Product Features:
- 600V N-Channel Power MOSFET
- High Power and Low Gate Charge
- Low On-Resistance
- Low Input Capacitance
- Low Output Capacitance
- Low Leakage Current
- High Speed Switching
Specifications:
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±20V
- Drain Current (ID): 33A
- Drain-Source On-Resistance (RDS(on)): 0.006 Ω
- Maximum Power Dissipation (PD): 157W
- Maximum Junction Temperature (TJ): 150°C
- Operating Junction Temperature (TJ): -55°C to 150°C
- Storage Temperature Range (TSTG): -55°C to 150°C
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