Product Listing:
IRF2805PBF MOSFET Transistor
The IRF2805PBF MOSFET Transistor is a N-channel enhancement-mode
Field-Effect Transistor that features a low on-resistance and a low
gate-to-source threshold voltage. This device is typically used in
switching applications such as motor control, relay drivers, and
other applications that require high-current switching.
Key Features:
• N-channel enhancement-mode Field-Effect Transistor
• Low on-resistance
• Low gate-to-source threshold voltage
• High-current switching capability
• Operating temperature range -55°C to +150°C
• Maximum drain current: 55A
• Maximum drain-source voltage: 500V
• Maximum gate-source voltage: +/- 20V
• Maximum power dissipation: 153W
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