SUP85N03-04P-E3 MOSFET Power
Electronics High Efficiency Switching for Robust Performance
Description:
The SUP85N03-04P-E3 is a N-Channel MOSFET designed for high-voltage
applications. It features low on-resistance, low gate charge, and
high power dissipation. It has a drain source voltage of 100 V and
a drain current of 8 A. The package type is a TO-220-3.
Parameters:
• Drain Source Voltage: 100 V
• Drain Current: 8 A
• On-Resistance: 0.0085 Ω
• Gate Charge: 19 nC
• Power Dissipation: 40 W
• Package Type: TO-220-3
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