SI5855CDC-T1-E3 MOSFET
Power Electronics High Performance Low On Resistance
Description:
The SI5855CDC-T1-E3 is an N-Channel MOSFET with 58A peak drain current, 56A continuous drain current, 55V drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, power switching and voltage regulation.
Parameters:
- Peak Drain Current: 58A
- Continuous Drain Current: 56A
- Drain-Source Voltage: 55V
- Gate-Source Voltage: +/-20V
- On-Resistance: 0.14 Ohms
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