IRFBG30PBF MOSFET High
Performance Power Electronics for Optimal Efficiency
Description:
The IRFBG30PBF is a high-performance N-Channel enhancement-mode
silicon gate power field-effect transistor designed for
high-density applications. This device offers low on-state
resistance, fast switching speed, and improved maximum ratings. It
is suitable for applications such as switching regulators,
converters, and motor control systems.
Parameters:
- Package: TO-220AB
- Drain-Source Voltage: 30V
- Gate-Source Voltage: ±20V
- Continuous Drain Current: 30A (Tc = 25°C)
- Drain-Source On-State Resistance: 0.022 ohm (VGS = 10V)
- Maximum Power Dissipation: 175W (Tc = 25°C)
- Operating Temperature: -55°C to 150°C
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