1.38W 20A Power Transistor ICs AP2302AGN-HF APEC

Name: 138W 20A Power Transistor ICs AP2302AGNHF APEC
Brand: Hua Xuan Yang
Price: 1 USD

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Brand Name :	Hua Xuan Yang
Model Number :	AP2302AGN-HF
Certification :	RoHS、SGS
Price :	Negotiate
Payment Terms :	Western Union, L/C, T/T
Supply Ability :	10,000PCS/MONTH
Delivery Time :	4~5 week

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1.38W 20A Power Transistor ICs AP2302AGN-HF APEC

Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF

Description

AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	4.6	A
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	3.7	A
IDM	Pulsed Drain Current¹	20	A
P_D@T_A=25℃	Total Power Dissipation	1.38	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	90	℃/W

AP2302AGN-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=4A	-	-	42	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=2.5V, I_D=3A	-	-	60	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.3	-	1.2	V
gfs	Forward Transconductance	V_DS=5V, I_D=4A	-	14	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+100	nA
Q_g	Total Gate Charge²	I_D=4A V_DS=10V V_GS=4.5V	-	6.5	10.5	nC
Qgs	Gate-Source Charge		-	1	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	2.5	-	nC
td(on)	Turn-on Delay Time²	V_DS=10V I_D=1A R_G=3.3Ω V_GS=5V	-	9	-	ns
t_r	Rise Time		-	12	-	ns
td(off)	Turn-off Delay Time		-	16	-	ns
t_f	Fall Time		-	5	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=20V f=1.0MHz	-	300	480	pF
Coss	Output Capacitance		-	85	-	pF
Crss	Reverse Transfer Capacitance		-	80	-	pF
R_g	Gate Resistance	f=1.0MHz	-	2	-	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=1.2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time²	I_S=4A, V_GS=0V, dI/dt=100A/µs	-	20	-	ns
Qrr	Reverse Recovery Charge	I_S=4A, V_GS=0V, dI/dt=100A/µs	-	10	-	nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on 1 in² copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.

Payment:

We accept the payment terms: Telegraphic Transfer(T/T) in advance / PayPal / Western Union / Escrow sevice or Net terms(Long-term cooperation).

We can support many kinds of currency, such as USD; HKD; EUR; CNY and Others, please contact us.

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