AP10H06S N Channel Mos Field Effect Transistor High Frequency

AP10H06S N Channel Mos Field Effect Transistor High Frequency

N Channel Mos Field Effect Transistor types

Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers. They use a number of different techniques that enable the power MOSFETs to carry the current and handle the power levels more efficiently. As already mentioned they often incorporate a form of vertical structure

The different types of power MOSFET have different attributes and therefore can be particularly suited for given applications.

• Planar power MOSFET: This is the basic form of power MOSFET. It is good for high voltage ratings because the ON resistance is dominated by the epi-layer resistance. This structure is generally used when a high cell density is not needed.
• VMOS: VMOS power MOSFETs have been available for many years. The basic concept uses a V groove structure to enable a more vertical flow of the current, thereby providing lower ON resistance levels and better switching characteristics. Although used for power switching, they may also be used for high frequency small RF power amplifiers.
• UMOS: The UMOS version of the power MOSFET uses a grove similar to that the VMOS FET. However the grove has a flatter bottom to it and provides some different advantages.
• HEXFET: This form of power MOSFET uses a hexagonal structure to provide the current capability.
• TrenchMOS: Again the TrenchMOS power MOSFET uses a similar basic grove or trench in the basic silicon to provide better handling capacity and characteristics. In particular, Trench power MOSFETs are mainly used for voltages above 200 volts because of their channel density and hence their lower ON resistance.

N Channel Mos Field Effect Transistor Features

VDS = 60V ID =10A
RDS(ON) < 20mΩ @ VGS=10V

N Channel Mos Field Effect Transistor Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Electrical Characteristics (TC=25℃unless otherwise noted)

Note

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Attention

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