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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

    Buy cheap AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 from wholesalers
     
    Buy cheap AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 from wholesalers
    • Buy cheap AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 from wholesalers
    • Buy cheap AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 from wholesalers
    • Buy cheap AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220 from wholesalers

    AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

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    Brand Name : Hua Xuan Yang
    Model Number : AP30N10P
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

    AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220


    Mosfet Power Transistor Description:


    The AP30N10P uses advanced trench technology
    to provide excellent RDS(ON), low gate charge and
    operation with gate voltages as low as 4.5V. This
    device is suitable for use as a
    Battery protection or in other Switching application.


    Mosfet Power Transistor Features


    VDS = 100V ID = 30 A
    RDS(ON) < 40mΩ @ VGS=10V


    Mosfet Power Transistor Application


    Battery protection
    Load switch
    Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP30P10PTO-220-3LAP30P10P XXX YYYY1000

    Absolute Maximum Ratings (TC=25℃unless otherwise noted)


    SymbolParameterRatingUnits
    VDSDrain-Source Voltage100V
    VGSGate-Sou rce Voltage±20V
    ID@TC=25℃Continuous Drain Current, V GS @ 10V 130A
    ID@TC=100 ℃Continuous Drain Current, V GS @ 10V 126A
    IDMPulsed Drain Current272A
    EASSingle Pulse Avalanche Energy 3126mJ
    IASAvalanche Current13A
    PD@TC=25 ℃Total Power Dissipation4125W
    TSTGStorage Temperature Range-55 to 175
    TJOperating Junction Temperature Range-55 to 175
    RθJAThermal Resistance Junction-ambient 162℃/W
    RθJCThermal Resistance Junction-Case 11.2℃/W

    Electrical Characteristics (TJ=25, unless otherwise noted)


    SymbolParameterConditionsMin.Typ.Max.Unit
    BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
    △ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.098---V/℃

    RDS(ON)


    Static Drain-Source On-Resistance

    VGS=10V , I D=16A---3640

    VGS=4.5V , I D=10A------50
    VGS(th)Gate Threshold Voltage1.5---2.5V
    △VGS(th)VGS(th) Temperature Coefficient----5.52---mV/℃

    IDSS


    Drain-Source Leakage Current

    VDS=80V , VGS=0V , TJ=25 ℃------10

    uA

    VDS=80V , VGS=0V , TJ=55 ℃------100
    IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
    gfsForward TransconductanceVDS=5V , ID=16A---30---S
    RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---1.6---
    QgTotal Gate Charge (10V)---45.6---
    QgsGate-Source Charge---6.7---
    QgdGate-Drain Charge---11.8---
    Td(on)Turn-On Delay Time

    VDD=50V , VGS=10V ,

    RG=3.3

    ID=10A

    ---12---

    ns

    Tr
    Td(off)Turn-Off Delay Time---42---
    TfFall Time---13.4---
    CissInput Capacitance---2270---
    CossOutput Capacitance---130---
    CrssReverse Transfer Capacitance---90---
    ISContinuous Source Current 1,5VG=VD=0V , Force Current------36A
    VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25 ℃------1.2V
    trrReverse Recovery Time

    IF=16A , dI/dt=100A/µs ,

    TJ=25 ℃

    ---33---nS
    QrrReverse Recovery Charge---28---nC
    SymbolParameterConditionsMin.Typ.Max.Unit
    BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
    △ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.098---V/℃

    RDS(ON)


    Static Drain-Source On-Resistance

    VGS=10V , I D=16A---3640

    VGS=4.5V , I D=10A------50
    VGS(th)Gate Threshold Voltage1.5---2.5V
    △VGS(th)VGS(th) Temperature Coefficient----5.52---mV/℃

    IDSS


    Drain-Source Leakage Current

    VDS=80V , VGS=0V , TJ=25 ℃------10

    uA

    VDS=80V , VGS=0V , TJ=55 ℃------100
    IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
    gfsForward TransconductanceVDS=5V , ID=16A---30---S
    RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---1.6---
    QgTotal Gate Charge (10V)---45.6---
    QgsGate-Source Charge---6.7---
    QgdGate-Drain Charge---11.8---
    Td(on)Turn-On Delay Time

    VDD=50V , VGS=10V ,

    RG=3.3

    ID=10A

    ---12---

    ns

    Tr
    Td(off)Turn-Off Delay Time---42---
    TfFall Time---13.4---
    CissInput Capacitance---2270---
    CossOutput Capacitance---130---
    CrssReverse Transfer Capacitance---90---
    ISContinuous Source Current 1,5VG=VD=0V , Force Current------36A
    VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25 ℃------1.2V
    trrReverse Recovery Time

    IF=16A , dI/dt=100A/µs ,

    TJ=25 ℃

    ---33---nS
    QrrReverse Recovery Charge---28---nC

    Attention


    1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

    2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

    3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

    4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

    5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

    6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

    7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

    8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.


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