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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

    Buy cheap 13P10D -100V Mosfet Power Transistor For Power Management ESD Protested from wholesalers
     
    Buy cheap 13P10D -100V Mosfet Power Transistor For Power Management ESD Protested from wholesalers
    • Buy cheap 13P10D -100V Mosfet Power Transistor For Power Management ESD Protested from wholesalers

    13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

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    Brand Name : Hua Xuan Yang
    Model Number : 13P10D
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

    13P10D -100V Mosfet Power Transistor For Power Management ESD Protested


    DESCRIPTION

    The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat

    e charge. It can be used in a wide variety of applications. It is ESD protested.


    FEATURES

    VDS =-100V,ID =-13A


    RDS(ON) <170m @ VGS=-10V (Typ:145m )


    Super high dense cell design Advanced trench process technology Reliable and rugged

    High density celldesign for ultra low on-resistance


    Application


    Power switch DC/DC converters


    Package Marking and Ordering Information

    Product IDPackMarkingQty(PCS)
    13P10DTO-25213P10D YYWW2500

    Thermal Characteristic


    Thermal Resistance,Junction-to-Case (Note 2)RθJc3.13℃/W

    ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS-100V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID-13A
    Drain Current-Continuous(TC=100℃)ID (100℃)-9.2A
    Pulsed Drain CurrentIDM-30A
    Maximum Power DissipationPD40W
    Derating factor0.32W/℃
    Single pulse avalanche energy (Note 5)EAS110mJ
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150℃

    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

    Absolute maximum ratings are stress ratings only and functional device operation is not implied.

    4. Repetitive Rating: Pulse width limited by maximum junction temperature.

    5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

    6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C


    ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)


    ParameterSymbolConditionMinTypMaxUnit
    Off Characteristics
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=-250μA-100--V
    Zero Gate Voltage Drain CurrentIDSSVDS=-100V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±20V,VDS=0V--±10μA
    On Characteristics (Note 3)
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=-250μA-1-3V
    Drain-Source On-State ResistanceRDS(ON)VGS=-10V, ID=-16A-145175mΩ
    Forward TransconductancegFSVDS=-15V,ID=-5A12--S
    Dynamic Characteristics (Note4)
    Input CapacitanceClss

    VDS=-25V,VGS=0V, F=1.0MHz

    		-760-PF
    Output CapacitanceCoss-260-PF
    Reverse Transfer CapacitanceCrss-170-PF
    Switching Characteristics (Note 4)
    Turn-on Delay Timetd(on)

    VDD=-50V,ID=-10A VGS=-10V,RGEN=9.1

    		-14-nS
    Turn-on Rise Timetr-18-nS
    Turn-Off Delay Timetd(off)-50-nS
    Turn-Off Fall Timetf-18-nS
    Total Gate ChargeQgVDS=-50V,ID=-10A, VGS=-10V-25-nC
    Gate-Source ChargeQgs-5-nC
    Gate-Drain ChargeQgd-7-nC
    Drain-Source Diode Characteristics
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=-10A---1.2V
    Diode Forward Current (Note 2)IS----13A
    Reverse Recovery Timetrr

    TJ = 25°C, IF =-10A

    di/dt = 100A/μs(Note3)

    		-35-nS
    Reverse Recovery ChargeQrr-46-nC
    Forward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


    Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.



    Product Tags:

    n channel mosfet transistor

      

    high voltage transistor

      
    Quality 13P10D -100V Mosfet Power Transistor For Power Management ESD Protested for sale

    13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

    Company Info.
    Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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