P Channel Enhancement Mode Mosfet Power Transistor 60P03D TO-252
30V
Mosfet Power Transistor DESCRIPTION
The AP60P03D uses advanced trench technology
and design to provide excellent R DS(ON) with low
gate charge .Thisdevice is well suited
for high current load applications.
Mosfet Power Transistor GENERAL FEATURES
V DS =-30V,I D =-60A
R DS(ON) <15mΩ @ V GS =-10V
R DS(ON) <20mΩ @ V GS =-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E AS
Excellent package for good heat dissipation
Mosfet Power Transistor Application
High side switch for full bridge converter
DC/DC converter for LCD display
Package Marking and Ordering Information
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction
temperature.
2. Surface Mounted on 1in 2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed
by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
DFN5X6-8 Package Information
