Sign In | Join Free | My burrillandco.com
Home > Switches >

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

    Buy cheap WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge from wholesalers
     
    Buy cheap WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge from wholesalers
    • Buy cheap WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge from wholesalers

    WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

    Ask Lasest Price
    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : WSF6012
    • Product Details
    • Company Profile

    WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

    QM4803D​ N-Ch and P-Channel MOSFET

    Description


    The WSF6012 is the highest performance

    trench N-ch and P-ch MOSFET with extreme

    high cell density , which provide excellent

    RDSON and gate charge for most of the

    synchronous buck converter applications .


    The WSF6012 meet the RoHS and Green

    Product requirement , 100% EAS

    guaranteed with full function reliability

    approved.


    Features
    z Advanced high cell density Trench technology
    z Super Low Gate Charge
    z Excellent CdV/dt effect decline
    z 100% EAS Guaranteed
    z Green Device Available

    Applications


    • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
    • z Networking DC-DC Power System
    • z CCFL Back-light Inverter

    Product Summery
    Absolute Maximum Ratings


    Thermal Data
    N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
    Guaranteed Avalanche Characteristics
    Diode Characteristics
    Note :
    1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
    2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
    3. The power dissipation is limited by 150℃ junction temperature
    4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
    P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
    Guaranteed Avalanche Characteristics​
    Diode Characteristics
    Note :
    1. The data tested by surface mounted on a 1 inch2
    FR-4 board with 2OZ copper.
    2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
    3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
    N-Channel Typical Characteristics
    P-Channel Typical Characteristics
    Quality WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge for sale
    • Haven't found right suppliers
    • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
    • And this service is free of charge.
    • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
    Submit Buying Request
    Send your message to this supplier
    *From:
    Your email address is incorrect!
    *Subject:
    Your subject must be between 10-255 characters!
    *Message:
    For the best results, we recommend including the following details:
    • --Self introduction
    • --Required specifications
    • --Inquire about price/MOQ
    Your message must be between 20-3,000
    Yes! I would like your verified suppliers matching service!
    Send your message to this supplier
     
    *From:
    *To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
    *Subject:
    *Message:
    Characters Remaining: (0/3000)
     
    Explore more Mosfet Power Transistor products from this supplier
    Find Similar Products By Category:
    Inquiry Cart 0