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2N60 2A, 600VN-CHANNEL POWER MOSFET

    Buy cheap 2N60 2A, 600VN-CHANNEL POWER MOSFET from wholesalers
     
    Buy cheap 2N60 2A, 600VN-CHANNEL POWER MOSFET from wholesalers
    • Buy cheap 2N60 2A, 600VN-CHANNEL POWER MOSFET from wholesalers

    2N60 2A, 600VN-CHANNEL POWER MOSFET

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    Brand Name : Hua Xuan Yang
    Model Number : 2N60
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    2N60 2A, 600VN-CHANNEL POWER MOSFET

    2N60-TC3 Power MOSFET

    2A, 600V N-CHANNEL POWER MOSFET


    DESCRIPTION

    The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.



    FEATURES

    RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A

    High Switching Speed


    ORDERING INFORMATION


    Ordering NumberPackagePin AssignmentPacking
    Lead FreeHalogen Free123
    2N60L-TF1-T2N60G-TF1-TTO-220F1GDSTube
    2N60L-TF3-T2N60G-TF3-TTO-220FGDSTube
    2N60L-TM3-T2N60G-TM3-TTO-251GDSTube


    Note: Pin Assignment: G: Gate D: Drain S: Source

    QW-R205-461.A


    n ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)


    PARAMETERSYMBOLRATINGSUNIT
    Drain-Source VoltageVDSS600V
    Gate-Source VoltageVGSS± 30V
    Drain CurrentContinuousID2A
    Pulsed (Note 2)IDM4A
    Avalanche EnergySingle Pulsed (Note 3)EAS84mJ
    Peak Diode Recovery dv/dt (Note 4)dv/dt4.5V/ns
    Power DissipationTO-220F/TO-220F1PD23W
    TO-25144W
    Junction TemperatureTJ+150°C
    Storage TemperatureTSTG-55 ~ +150°C

    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

    Absolute maximum ratings are stress ratings only and functional device operation is not implied.

    4. Repetitive Rating: Pulse width limited by maximum junction temperature.

    5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

    6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

    n THERMAL DATA


    PARAMETERSYMBOLRATINGSUNIT
    Junction to AmbientTO-220F/TO-220F1θJA62.5°C/W
    TO-251100°C/W
    Junction to CaseTO-220F/TO-220F1θJC5.5°C/W
    TO-2512.87°C/W

    n ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)


    PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown VoltageBVDSSVGS=0V, ID= 250μA600V
    Drain-Source Leakage CurrentIDSSVDS=600V, VGS=0V1µA
    Gate-Source Leakage CurrentForwardIGSSVGS=30V, VDS=0V100nA
    ReverseVGS=-30V, VDS=0V-100nA
    ON CHARACTERISTICS
    Gate Threshold VoltageVGS(TH)VDS=VGS, ID=250μA2.04.0V
    Static Drain-Source On-State ResistanceRDS(ON)VGS=10V, ID=1.0A7.0
    DYNAMIC CHARACTERISTICS
    Input CapacitanceCISS

    VGS=0V, VDS=25V, f=1.0 MHz

    190pF
    Output CapacitanceCOSS28pF
    Reverse Transfer CapacitanceCRSS2pF
    SWITCHING CHARACTERISTICS
    Total Gate Charge (Note 1)QGVDS=200V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2)7nC
    Gateource ChargeQGS2.9nC
    Gate-Drain ChargeQGD1.9nC
    Turn-on Delay Time (Note 1)tD(ON)

    VDS=300V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2)

    4ns
    Rise TimetR16ns
    Turn-off Delay TimetD(OFF)16ns
    Fall-TimetF19ns
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Maximum Body-Diode Continuous CurrentIS2A
    Maximum Body-Diode Pulsed CurrentISM8A
    Drain-Source Diode Forward Voltage (Note 1)VSDVGS=0V, IS=2.0A1.4V
    Reverse Recovery Time (Note 1)trr

    VGS=0V, IS=2.0A,

    dIF/dt=100A/µs (Note1)

    232ns
    Reverse Recovery ChargeQrr1.1µC

    Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

    • Essentially independent of operating temperature.


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