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| Brand Name : | ST Micro electronics |
| Model Number : | STI20N60M2-EP |
| Certification : | Original Part |
| Price : | to be Negotiated |
| Payment Terms : | T/T, Western Union, Paypal, Wechat Pay |
| Supply Ability : | 1 Million pieces per Month |
| Delivery Time : | Immediate |
STI20N60M2-EP Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) I2PAK Tube
Basic Parameters :
Absolute Maximum Ratings :
Description :
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout
and an improved vertical structure, the device exhibits low on-resistance,
optimized switching characteristics with very low turn-off switching losses, rendering
it suitable for the most demanding very high frequency converters.
Technical Specifications :
| Tab | Tab |
| Package Width | 4.83(Max) |
| Package Height | 9.02(Max) |
| Package Length | 10.67(Max) |
| PCB changed | 3 |
| Lead Shape | Through Hole |
| Mounting | Through Hole |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Process Technology | HEXFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 55 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 110 |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Typical Gate Charge @ Vgs (nC) | 146(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 146(Max) |
| Typical Input Capacitance @ Vds (pF) | 3247@25V |
| Maximum Power Dissipation (mW) | 200000 |
| Typical Fall Time (ns) | 65 |
| Typical Rise Time (ns) | 101 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 14 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Automotive | No |
| Supplier Package | TO-220AB |
| Standard Package Name | TO-220 |
| Pin Count | 3 |
| Military | No |
for product datasheet, CONTACT US directly.
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