High Power Silicon Carbide MOSFET Based On The National Military
Standard Production Line
Product Description:
Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor
(SiC MOSFET) is a type of power semiconductor device made of
silicon carbide material, which is ideal for high-voltage and
high-power applications. These Silicon Carbide MOSFETs are widely
used in solar inverter, high-voltage DC/DC converter, motor driver,
UPS power supply, switching power supply and charging pile, etc.
due to its low on-resistance and excellent switching performance.
They are designed to provide superior performance, robustness and
reliability in the most demanding environments. Moreover, the
Silicon Carbide MOSFETs feature fast switching speed, low gate
charge, temperature independent switching characteristics, low
power loss, and wide operation temperature range.
Technical Parameters:
| Parameter | Value |
|---|
| Power | High Power |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS
Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Product name | Silicon Carbide MOSFET |
| Advantages | Based On The National Military Standard Production Line, The
Process Is Stable And The Quality Is Reliable |
| Device Type | MOSFET |
| Frequency | High Frequency |
| Efficiency | High Efficiency |
| Material | Silicon Carbide |
| Type | N |
| Resistance | Low On Resistance |
Applications:
REASUNOS Silicon Carbide MOSFET (SiC MOSFETs) is a type of
metal-oxide-semiconductor field-effect transistor (MOSFET) that
utilizes silicon carbide as the semiconductor material. It is
designed to be used in high-frequency and high-efficiency
applications, such as photovoltaic inverters, automotive power
modules, and industrial motor drives. The SiC Field Effect
Transistor is capable of handling high power and providing high
efficiency due to its excellent thermal and electrical properties.
Furthermore, it has a low on-resistance and a high switching
frequency, which makes it a suitable component for power conversion
applications.
REASUNOS Silicon Carbide MOSFET is available with a minimum order
quantity of 600 and is packaged in dustproof, waterproof, and
anti-static tubular packaging, placed inside a cardboard box in
cartons. The product is offered with a delivery time of 2-30 days,
depending on the total quantity. Moreover, the payment terms are
100% T/T in Advance (EXW) and the supply ability is 5KK/month. The
device type is N-type with a high frequency and a high power.
Support and Services:
Silicon Carbide MOSFET Technical Support and Service
We provide technical support and service for our Silicon Carbide
MOSFET products. Our knowledgeable team is on hand to answer any
questions you may have about our products and provide you with the
information you need to make an informed purchase decision.
Our technical support staff will help you troubleshoot any issues
you may have with our products, and our dedicated customer service
team is there to address any questions or concerns you may have
about our products and services.
We strive to provide you with the best possible service, and are
committed to making sure you are satisfied with our products and
services.
Packing and Shipping:
The packaging and shipping of Silicon Carbide MOSFET includes:
- Bubble wrap
- Plastic wrap
- Boxed
- Insulated box
- Labeled
- Insured
- Tracking number
FAQ:
Q1: What is the brand name of Silicon Carbide MOSFET?
A1: The brand name is REASUNOS.
Q2: Where is Silicon Carbide MOSFET manufactured?
A2: Silicon Carbide MOSFET is manufactured from Guangdong, China.
Q3: What is the minimum order quantity for Silicon Carbide MOSFET?
A3: The minimum order quantity is 600.
Q4: What is the delivery time of Silicon Carbide MOSFET?
A4: The delivery time is 2-30 days, depending on the total
quantity.
Q5: What are the payment terms for Silicon Carbide MOSFET?
A5: The payment terms are 100% T/T in advance (EXW).
