2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN
substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer
About GaN Feature Introduce
The growing demand for high-speed, high-temperature and high
power-handling capabilities has made the semiconductor industry
rethink the choice of materials used as semiconductors. For
instance,
as various faster and smaller computing devices arise, the use of
silicon is making it difficult to sustain Moore’s Law. But also in
power electronics, So GaN semiconductor wafer is grown out for the
need.
Due to its unique characteristics (high maximum current, high
breakdown voltage, and high switching frequency), Gallium Nitride
GaN is the unique material of choice to solve energy problems of the future.
GaN based systems have higher power efficiency, thus reducing power
losses, switch at higher frequency, thus reducing size and weight.
GaN technology is used in numerous high-power applications such as
industrial, consumer and server power supplies, solar, AC drive and
UPS inverters, and hybrid and electric cars. Furthermore,
GaN is ideally suited for RF applications such as cellular base
stations, radars and cable TV
infrastructure in the networking, aerospace and defense sectors,
thanks to its high breakdown strength,low noise figure and high
linearity.
Applications
- - Various LED's: white LED, violet LED, ultraviolet LED, blue LED
- - Environmental detection
- Substrates for epitaxial growth by MOCVD etc
- - Laser diodes: violet LD, green LD for ultra small projectors.
- - Power electronic devices
- - High frequency electronic devices
- Laser Projection Display, Power Device, etc.
- Date storage
- Energy-efficient lighting
- High- Efficiency Electronic devices
- New energy solor hydrogen technology
- Light source terahertz band
Specifications for GaN Substrates LED grade
| 2”GaN Substrates | |
| Item | GaN-FS-N | |
| Dimensions | Ф 50.8mm ± 1mm |
| Marco Defect Density | | |
| C Level | > 2 cm-2 |
| Thickness | 330 ± 25 µm |
| Orientation | C-axis(0001) ± 0.5° |
| Orientation Flat | (1-100) ± 0.5°, 16.0 ± 1.0mm |
| Secondary Orientation Flat | (11-20) ± 3°, 8.0 ± 1.0mm |
| TTV(Total Thickness Variation) | ≤15 µm |
| BOW | ≤20 µm |
| Conduction Type | N-type | |
| Resistivity(300K) | < 0.5 Ω·cm | |
| Dislocation Density | Less than 5x106 cm-2 |
| Useable Surface Area | > 90% |
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished |
| Back Surface: Fine ground |
| Package | Packaged in a class 100 clean room environment, in single wafer
containers, under a nitrogen atmosphere. |
Macro defect quanlity is ＜30pcs for LED grade wafers
commen(15-30pcs)
Our services
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
FAQ
Q: Is there any stock or standard product?
A: Yes, commen size as like2inch 0.3mm standard size always in
stocks.
Q: How about the samples policy?
A: sorry, but suggest you can buy some 10x10mm size back for test
firstly.
Q: If i place an order now ,how long would it be before i got
delivery ?
A: standard size in stock in 1weeks can be expressed after payment.
and our payment term is 50％ deposit and left before delivery.
