AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC
Chips
This product is sensitive to electrostatic discharge, please handle
with care.
This product is not authorized to be used as a critical component
of a life support system or other similar systems.
APEC shall not be liable for any liability arising from the
application or use of any product or circuit described in this
agreement, nor shall it assign any license under its patent rights
or assign the rights of others.
APEC reserves the right to make changes to any product in this
Agreement without notice to improve reliability, function or
design.
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 2.5 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 2.0 | A |
| IDM | Pulsed Drain Current1 | 10 | A |
| PD@TA=25℃ | Total Power Dissipation | 0.833 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 150 | ℃/W |
AP2322G
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=1.6A | - | - | 90 | mΩ |
| VGS=2.5V, ID=1A | - | - | 120 | mΩ |
| VGS=1.8V, ID=0.3A | - | - | 150 | mΩ |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=1mA | 0.25 | - | 1 | V |
| gfs | Forward Transconductance | VDS=5V, ID=2A | - | 2 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=2.2A VDS=16V VGS=4.5V | - | 7 | 11 | nC |
| Qgs | Gate-Source Charge | - | 0.7 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 2.5 | - | nC |
| td(on) | Turn-on Delay Time | VDS=10V ID=1A RG=3.3Ω VGS=5V | - | 6 | - | ns |
| tr | Rise Time | - | 12 | - | ns |
| td(off) | Turn-off Delay Time | - | 16 | - | ns |
| tf | Fall Time | - | 4 | - | ns |
| Ciss | Input Capacitance | V.GS=0V VDS=20V f=1.0MHz | - | 350 | 560 | pF |
| Coss | Output Capacitance | - | 55 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 48 | - | pF |
| Rg | Gate Resistance | f=1.0MHz | - | 3.2 | 4.8 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=0.7A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=2A, VGS=0V, dI/dt=100A/µs | - | 20 | - | ns |
| Qrr | Reverse Recovery Charge | - | 13 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.
