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Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

    Buy cheap Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed from wholesalers
     
    Buy cheap Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed from wholesalers
    • Buy cheap Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed from wholesalers
    • Buy cheap Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed from wholesalers
    • Buy cheap Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed from wholesalers

    Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

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    Brand Name : Hua Xuan Yang
    Model Number : AP8205S
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

    Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed


    Mosfet Power Transistor Description:


    The AP8205S uses advanced trench technology
    to provide excellent RDS(ON), low gate charge
    and operation with gate voltages as low as 2.5V.
    This device is suitable for use as a Battery
    protection or in other Switching application.


    Mosfet Power Transistor Features


    VDS = 20V,ID = 6A
    RDS(ON) < 20.5.mΩ @ VGS=4.5V
    RDS(ON) < 27.mΩ @ VGS=2.5V


    Mosfet Power Transistor Application


    Battery protection
    Load switch
    Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP8205SSOT23-68205S3000

    Electrical Characteristics@Tj=25C(unless otherwise specified)


    SymbolParameterTest ConditionsMin.Typ.Max.Units
    BVDSSDrain-Source Breakdown VoltageVGS=0V, ID=250uA20--V
    RDS(ON)Static Drain-Source On-ResistanceVGS=4.5V, I D=6A-20.527
    VGS=2.5V, I D=4A-2737
    VGS(th)Gate Threshold VoltageVDS=VGS, ID=250uA-0.751.2V
    gfsForward TransconductanceVDS=10V, ID=6A-6-S
    IDSSDrain-Source Leakage CurrentVDS=20V, VGS=0V--25uA

    Drain-Source Leakage Current

    (Tj=70 C)

    VDS=20V ,VGS=0V--250uA
    IGSSGate-Source LeakageVGS=+12V, VDS=0V--+100nA
    QgTotal Gate Charge 2ID=6A-1117.6nC
    QgsGate-Source Charge-1.1-nC
    QgdGate-Drain ("Miller") Charge-4.1-nC
    td(on)Turn-on Delay Time 2VDS=10V-4.2-ns

    r

    t

    Rise Time-9-ns
    td(off)Turn-off Delay Time-23-ns

    f

    t

    Fall Time-3.5-ns
    CissInput Capacitance

    VGS=0V

    -570910pF
    CossOutput Capacitance-90-pF
    CrssReverse Transfer Capacitance-85-pF
    RgGate Resistancef=1.0MHz-1.62.4Ω
    VSDForward On Voltage2IS=1.7A, VGS=0V--1.2V
    trrReverse Recovery Time 2IS=6A, VGS=0V, dI/dt=100A/µs-21-ns
    QrrReverse Recovery Charge-14-nC
    SymbolParameterTest ConditionsMin.Typ.Max.Units
    BVDSSDrain-Source Breakdown VoltageVGS=0V, ID=250uA20--V
    RDS(ON)Static Drain-Source On-ResistanceVGS=4.5V, I D=6A-20.527
    VGS=2.5V, I D=4A-2737
    VGS(th)Gate Threshold VoltageVDS=VGS, ID=250uA-0.751.2V
    gfsForward TransconductanceVDS=10V, ID=6A-6-S
    IDSSDrain-Source Leakage CurrentVDS=20V, VGS=0V--25uA

    Drain-Source Leakage Current

    (Tj=70 C)

    VDS=20V ,VGS=0V--250uA
    IGSSGate-Source LeakageVGS=+12V, VDS=0V--+100nA
    QgTotal Gate Charge 2ID=6A-1117.6nC
    QgsGate-Source Charge-1.1-nC
    QgdGate-Drain ("Miller") Charge-4.1-nC
    td(on)Turn-on Delay Time 2VDS=10V-4.2-ns

    r

    t

    Rise Time-9-ns
    td(off)Turn-off Delay Time-23-ns

    f

    t

    Fall Time-3.5-ns
    CissInput Capacitance

    VGS=0V

    -570910pF
    CossOutput Capacitance-90-pF
    CrssReverse Transfer Capacitance-85-pF
    RgGate Resistancef=1.0MHz-1.62.4Ω
    VSDForward On Voltage2IS=1.7A, VGS=0V--1.2V
    trrReverse Recovery Time 2IS=6A, VGS=0V, dI/dt=100A/µs-21-ns
    QrrReverse Recovery Charge-14-nC

    Attention


    1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

    2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

    3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

    4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

    5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

    6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

    7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

    8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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