2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"

2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, metallization on silicon substrate, and epi wafer service.

2inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"

What is Silicon Wafer Used For?

Silicon wafer’s primary use is in integrated circuits. Integrated circuits power many of the devices that modern society uses every day. Computers and smartphones are just two of the devices that are dependent on this technology. Although other semiconductors have been tested overtime, silicon has proved to be stable option. Other uses include sensors, such as the tire pressure sensor system, and solar cells. Silicon wafers absorb the photons in sunlight and this in turn create electricity.

Are You Looking for an Silicon Wafer?

PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.