Product Description
Float-Zone Silicon Wafer With High-Resistivity And Good Lifetime.
FZ-Silicon
The mono-crystalline silicon with the characteristics of low
foreign-material content, low defect density and perfect crystal
structure is produced with the float-zone process; no foreign
material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is
mainly used to produce the high inverse-voltage elements and
photoelectronic devices.
NTDFZ-Silicon
The mono-crystalline silicon with high-resistivity and uniformity
can be achieved by neutron irradiation of FZ-silicon, to ensure the yield and uniformity of produced elements, and is
mainly used to produce the silicon rectifier (SR), silicon control
(SCR), giant transistor (GTR), gate-turn-off thyristor (GTO),
static induction thyristor (SITH), insulate-gate bipolar transistor
(IGBT), extra HV diode (PIN), smart power and power IC, etc; it is
the main functional material for various frequency converters,
rectifiers, large-power control elements, new power electronic
devices, detectors, sensors, photoelectronic devices and special
power devices..
GDFZ-Silicon
Utilizing the foreign-material diffusion mechanism, add the
gas-phase foreign-material during the float-zone process of
monocrystalline silicon, to solve the doping problem of float-zone
process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm,
relative good resistivity uniformity and neutron irradiation. It is
applicable for producing various semi-conductor power elements,
insulate-gate bipolar transistor (IGBT) and high-efficiency solar
cell, etc.
CFZ-Silicon
The monocrystalline-silicon is produced with the combination of
Czochralski and float-zone processes, and has the quality between
the CZ monocrystalline silicon and FZ monocrystalline silicon; the
special elements can be doped, such as the Ga, Ge and others. The
new-generation CFZ silicon solar wafers are better than various
silicon wafers in global PV industry on each performance index; the
conversion efficiency of solar panel is up to 24-26%. The products
are mainly applied in the high-efficiency solar batteries with the
special structure, back-contact, HIT and other special processes,
and more widely used in the LED, power elements, automobile,
satellite and other various products and fields.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good
surface roughness.
3.Strong research team support and technology support for our
customers
FZ monocrystalline silicon specification
| Type | Conduction Type | Orientation | Diameter(mm) | Conductivity(Ω•cm) |
| High resistance | N&P | <100>&<111> | 76.2-200 | >1000 |
| NTD | N | <100>&<111> | 76.2-200 | 30-800 |
| CFZ | N&P | <100>&<111> | 76.2-200 | 1-50 |
| GD | N&P | <100>&<111> | 76.2-200 | 0.001-300 |
Wafer specification
| Ingot Parameter | Item | Description |
| Growing method | FZ |
| Orientation | <111> |
| Off-orientation | 4±0.5 degree to the nearest <110> |
| Type/Dopant | P/Boron |
| Resistivity | 10-20 W.cm |
| RRV | ≤15% (Max edge-Cen)/Cen |
| Wafer Parameter | Item | Description |
| Diameter | 150±0.5 mm |
| Thickness | 675±15 um |
| Primary Flat Length | 57.5±2.5 mm |
| Primary Flat Orientation | <011>±1 degree |
| Secondary Flat Length | None |
| Secondary Flat Orientation | None |
| TTV | ≤5 um |
| Bow | ≤40 um |
| Warp | ≤40 um |
| Edge Profile | SEMI Standard |
| Front Surface | Chemical-Mechenical Polishing |
| LPD | ≥0.3 um@≤15 pcs |
| Back Surface | Acid Etched |
| Edge Chips | None |
| Package | Vacuum Packing; Inner Plastic, Outer Aluminum |
