P Type , Gallium-Doped Germanium Wafer Substrate , 4”

P Type , Gallium-Doped Germanium Wafer Substrate , 4”

PAM-XIAMEN offers Germanium wafer Single Crystals and Wafers grown by VGF / LEC, we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch. Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium requirement.

Standard Specs Of Germanium Crystal And Wafer

Specification of Germanium Wafer

What Is The Germanium Wafer Production Process?

The process of transforming an element into thin wafers with a damage free, mirror-like, clean surface is no easy task. It requires a series of steps. Here are the 5 steps in the germanium wafer production process:

1) Highly pure germanium is attained during zone refining.

2) The Czochralski process transforms the element into a germanium crystal.

3) The crystal is manufactured into a wafer through the process of cutting, grinding and etching.

4) The Ge wafers are cleaned and inspected. This step requires the wafers to be polished on either one or both sides, depending on the customers needs.

5) The high-quality wafers are packed under a nitrogen atmosphere in single wafer containers.

Are You Looking for Germanium Wafers?

PAM-XIAMEN offer germanium wafers. No matter what the project or use is, we have germanium wafers available at competitive prices. Enquire us today to learn more about how we can help you with all your wafer needs.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.