Undoped GaSb Wafer , 2”, As-Cut Wafer , Mechanical Wafer , Or Polished Wafer

Undoped GaSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer
PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

2" GaSb Wafer Specification

Band structure and carrier concentration of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters

Band structure and carrier concentration of GaSb. 300 K Eg= 0.726 eV EL = 0.81 eV EX = 1.03 eV Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.813 - 3.78·10-4·T2/(T+94) (eV),
where T is temperature in degrees K (0 < T < 300).

Temperature dependence of energy EL

EL = 0.902 - 3.97·10-4·T2/(T+94) (eV)

Temperature dependence of energy EX

EX = 1.142 - 4.75·10-4·T2/(T+94) (eV)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the valence band

Nv = 3.5·1015·T3/2 (cm-3)

The temperature dependences of the intrinsic carrier concentration.

Dependences on Hydrostatic Pressure

Eg = Eg(0) + 14.5·10-3P (eV)
EL = EL(0) + 5.0·10-3P (eV)
EX = EX(0) - 1.5·10-3P (eV),
where P is pressure in kbar.

Energy Gap Narrowing at High Doping Levels

Energy gap narrowing versus acceptor acceptor doping density. Curve is calculated for p-GaSb according to Points show experimental results

For n-type GaSb

Eg = 13.6·10-9·Nd1/3 + 1.66·10-7·Nd1/4 + 119·10-12·Nd1/2 (eV)

For p-type GaSb

Eg = 8.07·10-9·Na1/3 + 2.80·10-7·Na1/4+ 4.12·10-12·Na1/2 (eV)

Effective Masses

Electrons:

Holes:

Donors and Acceptors

The diagram of IV group donor states

Ionization energies of shallow donors (eV)

For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.

Ionization energies of shallow acceptors (eV):

The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable

Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.