4H Semi-Insulating SiC Materials , Dummy Grade , 6”Size
PAM-XIAMEN provides high quality single crystal SiC (Silicon
Carbide) wafer for electronic and optoelectronic industry. SiC
wafer is a next generation semiconductor materialwith unique
electrical properties and excellent thermal properties for high
temperature and high power device application. SiC wafer can be
supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type ,
Nitrogen doped , and semi-insulating type available.
Please contact us for more information
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H Semi-Insulating SiC, Dummy Grade,6”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Dummy Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical
polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation |
| On axis <0001>± 0.5° |
| Off axis 3.5° toward <11-20>± 0.5° |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ±
5° |
| C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
Single crystal SiC Properties
Here we compare property of Silicon Carbide, including Hexagonal
SiC,CubicSiC,Single crystal SiC.
Property of Silicon Carbide (SiC)
Comparision of Property of Silicon Carbide, including Hexagonal
SiC,Cubic SiC,Single crystal SiC:
| Property | Value | Conditions |
| Density | 3217 kg/m^3 | hexagonal |
| Density | 3210 kg/m^3 | cubic |
| Density | 3200 kg/m^3 | Single crystal |
| Hardness,Knoop(KH) | 2960 kg/mm/mm | 100g,Ceramic,black |
| Hardness,Knoop(KH) | 2745 kg/mm/mm | 100g,Ceramic,green |
| Hardness,Knoop(KH) | 2480 kg/mm/mm | Single crystal. |
| Young's Modulus | 700 GPa | Single crystal. |
| Young's Modulus | 410.47 GPa | Ceramic,density=3120 kg/m/m/m, at room temperature |
| Young's Modulus | 401.38 GPa | Ceramic,density=3128 kg/m/m/m, at room temperature |
| Thermal conductivity | 350 W/m/K | Single crystal. |
| Yield strength | 21 GPa | Single crystal. |
| Heat capacity | 1.46 J/mol/K | Ceramic,at temp=1550 C. |
| Heat capacity | 1.38 J/mol/K | Ceramic,at temp=1350 C. |
| Heat capacity | 1.34 J/mol/K | Ceramic,at temp=1200 C. |
| Heat capacity | 1.25 J/mol/K | Ceramic,at temp=1000 C. |
| Heat capacity | 1.13 J/mol/K | Ceramic,at temp=700 C. |
| Heat capacity | 1.09 J/mol/K | Ceramic,at temp=540 C. |
| Electrical resistivity | 1 .. 1e+10 Ω*m | Ceramic,at temp=20 C |
| Compressive strength | 0.5655 .. 1.3793 GPa | Ceramic,at temp=25 C |
| Modulus of Rupture | 0.2897 GPa | Ceramic,with 1 wt% B addictive |
| Modulus of Rupture | 0.1862 GPa | Ceramifc,at room temperature |
| Poisson's Ratio | 0.183 .. 0.192 | Ceramic,at room temperature,density=3128 kg/m/m/m |
| Modulus of Rupture | 0.1724 GPa | Ceramic,at temp=1300 C |
| Modulus of Rupture | 0.1034 GPa | Ceramic,at temp=1800 C |
| Modulus of Rupture | 0.07586 GPa | Ceramic,at temp=1400 C |
| Tensile strength | 0.03448 .. 0.1379 GPa | Ceramic,at temp=25 C |
* Reference:CRC Materials Science and Engineering Handbook
Comparision of Property of single crystal SiC, 6H and 4H:
| Property | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
* Reference:Xiamen Powerway Advanced Material Co.,Ltd.
Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:
| Si-C Polytype | 3C-SiC | 4H-SiC | 6H-SiC |
| Crystal structure | Zinc blende (cubic) | Wurtzite ( Hexagonal) | Wurtzite ( Hexagonal) |
| Group of symmetry | T2d-F43m | C46v-P63mc | C46v-P63mc |
| Bulk modulus | 2.5 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 | 2.2 x 1012 dyn cm-2 |
| Linear thermal expansion coefficient | 2.77 (42) x 10-6 K-1 | | |
| Debye temperature | 1200 K | 1300 K | 1200 K |
| Melting point | 3103 (40) K | 3103 ± 40 K | 3103 ± 40 K |
| Density | 3.166 g cm-3 | 3.21 g cm-3 | 3.211 g cm-3 |
| Hardness | 9.2-9.3 | 9.2-9.3 | 9.2-9.3 |
| Surface microhardness | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 | 2900-3100 kg mm-2 |
| Dielectric constant (static) | ε0 ~= 9.72 | The value of 6H-SiC dielectric constant is usually used | ε0,ort ~= 9.66 |
| Infrared refractive index | ~=2.55 | ~=2.55 (c axis) | ~=2.55 (c axis) |
| Refractive index n(λ) | n(λ)~= 2.55378 + 3.417 x 104·λ-2 | n0(λ)~= 2.5610 + 3.4 x 104·λ-2 | n0(λ)~= 2.55531 + 3.34 x 104·λ-2 |
| ne(λ)~= 2.6041 + 3.75 x 104·λ-2 | ne(λ)~= 2.5852 + 3.68 x 104·λ-2 |
| Radiative recombination coefficient | | 1.5 x 10-12 cm3/s | 1.5 x 10-12 cm3/s |
| Optical photon energy | 102.8 meV | 104.2 meV | 104.2 meV |
| Effective electron mass (longitudinal)ml | 0.68mo | 0.677(15)mo | 0.29mo |
|
| Effective electron mass (transverse)mt | 0.25mo | 0.247(11)mo | 0.42mo |
|
| Effective mass of density of states mcd | 0.72mo | 0.77mo | 2.34mo |
| Effective mass of the density of states in one valley of conduction
band mc | 0.35mo | 0.37mo | 0.71mo |
|
| Effective mass of conductivity mcc | 0.32mo | 0.36mo | 0.57mo |
| Effective hall mass of density of state mv? | 0.6 mo | ~1.0 mo | ~1.0 mo |
| Lattice constant | a=4.3596 A | a = 3.0730 A | a = 3.0730 A |
| b = 10.053 | b = 10.053 |
* Reference: IOFFE
SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s
leading developer of solid-state lighting technology,he offer a
full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC
wafer reclaim
SiC High-Power Rectifiers
The high-power diode rectifier is a critical building block of
power conversion circuits. Recent reviews of experimental SiC
rectifier results are given in References 3, 134, 172, 180, and
181. Most important SiC diode rectifier device design trade-offs
roughly parallel well-known silicon rectifier trade-offs, except
for the fact that current densities, voltages, power densities, and
switching speeds are much higher in SiC. For example, semiconductor
Schottky diode rectifiers are majority carrier devices that are
well known to exhibit very fast switching owing to the absence of
minority carrier charge storage that dominates (i.e., slows,
adversely resulting in undesired waste power and heat) the
switching operation of bipolar pn junction rectifiers. However, the
high breakdown field and wide energy bandgap permit operation of
SiC metal–semiconductor Schottky diodes at much higher voltages
(above 1 kV) than is practical with siliconbased Schottky diodes
that are limited to operation below ~200 V owing to much higher
reverse-bias thermionic leakage.
