4H Semi-Insulating SiC , Production Grade With Low Micropipe Density , 6”Size

4H Semi-Insulating SiC , Production Grade With Low Micropipe Density , 6”Size

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.

How to Eliminate or Reduce Micropipe Density When SiC Growth?

To Eliminate or Reduce Micropipe Density, there are following main methods:

1) Zero micropipe seed crystal: Because the micropipe in the seed crystal will be basically copied in the crystal growth, using zero micropipe seed crystal is a requirement to get zero micropipe crystal ingots. The seed crystal of the zero microtubule can be a piece of SiC wafer, or the ingot slices grown from (1120) or (1100) crystal surface can be selected.

2) Stable growth under optimized conditions: any temperature distribution or pressure fluctuation in the crucible will cause harmful supercooling and / or C / Si ratio deviation on the growth surface. The degradation of source materials (such as graphitization) will also disturb the control of C / Si ratio. Therefore, the growth conditions must be optimized and carefully maintained in the whole process of sublimation.

3) Microtubule closure (dissociation): when liquid phase epitaxy and chemical vapor deposition (CVD) sic are carried out under Si rich conditions, a microtubule with a Burgers vector of ne (n = 3, 4.5. -) can be decomposed into multiple unit (closed core) screw dislocations with Burgers vector of 1C. As a result, the microtubule (pinhole) will gradually close during the growth process.

Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES

4H Semi-Insulating SIC, Production Grade,6”Size

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.

SiC High-Power Switching Devices

The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers are presently a primary factor limiting the commercialization of useful SiC high-power switching devices. This section focuses on the additional developmental aspects of SiC power rectifiers and power switching transistor technologies.

Most SiC power device prototypes employ similar topologies and features as their silicon-based counterparts such as vertical flow of high current through the substrate to maximize device current using minimal wafer area (i.e., maximize current density) . In contrast to silicon, however, the relatively low conductivity of present-day p-type SiC substrates (Section 5.4.3) dictates that all vertical SiC power device structures be implemented using n-type substrates in order to achieve beneficially high vertical current densities. Many of the device design trade-offs roughly parallel well-known silicon power device trade-offs, except for the fact that numbers for current densities, voltages, power densities, and switching speeds are much higher in SiC.

For power devices to successfully function at high voltages, peripheral breakdown owing to edgerelated electric field crowding must be avoided through careful device design and proper choice of insulating/passivating dielectric materials. The peak voltage of many prototype high-voltage SiC devices has often been limited by destructive edge-related breakdown, especially in SiC devices capable of blocking multiple kilovolts. In addition, most testing of many prototype multikilovolt SiC devices has required the device to be immersed in specialized high-dielectric strength fluids or gas atmospheres to minimize damaging electrical arcing and surface flashover at device peripheries. A variety of edge-termination methodologies, many of which were originally pioneered in silicon highvoltage devices, have been applied to prototype SiC power devices with varying degrees of success, including tailored dopant and metal guard rings . The higher voltages and higher local electric fields of SiC power devices will place larger stresses on packaging and on wafer insulating materials, so some of the materials used to insulate/passivate silicon high-voltage devices may not prove sufficient for reliable use in SiC high-voltage devices, especially if those devices are to be operated at high temperatures.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.