4H Semi-Insulating SiC Wafer With Low TTV/BOW/WARP, Dummy Grade,3”Size

4H Semi-Insulating SiC Wafer With Low TV/BOW/WARP, Dummy Grade,3”Size

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

Application of Semi-Insulating SiC Dummy Wafer:

SiC Dummy Wafer can use in researches of Thermal and mechanical fields, and the detail application should be as follows:

1. Researches in SiC Thermal conductivity
2.Researches of SiC phonon
3.Resarches in SiC hardness and mechanical properties

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PROPERTIES OF SEMI-INSULATING SILICON CARBIDE MATERIAL

4H Semi-Insulating SiC Wafer, Dummy Grade,3”Size

sic crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.

Historical Lack of SiC Wafers

Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite forcommercial mass production of semiconductor electronics. Many semiconductor materials can be meltedand reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as in theCzochralski method employed in the manufacture of almost all silicon wafers, enabling reasonably largewafers to be mass produced. However, because SiC sublimes instead of melting at reasonably attainablepressures, SiC cannot be grown by conventional melt-growth techniques. Prior to 1980, experimentalSiC electronic devices were confined to small (typically ~1 ), irregularly shaped SiC crystal plateletsgrown as a byproduct of the Acheson process for manufacturing industrial abrasives (e.g., sandpaper) or by the Lely process . In the Lely process, SiC sublimed from polycrystalline SiC powder attemperatures near 2500°C are randomly condensed on the walls of a cavity forming small, hexagonallyshaped platelets. While these small, nonreproducible crystals permitted some basic SiC electronicsresearch, they were clearly not suitable for semiconductor mass production. As such, silicon became thedominant semiconductor fueling the solid-state technology revolution, while interest in SiC-based microelectronicswas limited.

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.