(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices
PAM-XIAMEN has established the manufacturing technology for
freestanding (Gallium Nitride)GaN substrate wafer which is for
UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE)
technology,Our GaN substrate has low defect density and less or
free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials
including GaN substrates of various orientations and electrical
conductivity,crystallineGaN&AlN templates, and custom III-N
epiwafers.
Here Shows Detail Specification:
(10-11) Plane N-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN(10-11)-N |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.05 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 10 5to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed
in class 100 clean room |
Application of GaN Substrate
Solid State Lighting:GaN devices are used as ultra high brightness
light emitting diodes (LEDs), TVs, automobiles, and general
lighting
DVD Storage: Blue laser diodes
Power Device: GaN devices are used as various components in
high-power and high-frequency power electronics like cellular base
stations, satellites, power amplifiers, and inverters/converters
for electric vehicles (EV) and hybrid electric vehicles (HEV).
GaN’s low sensitivity to ionizing radiation (like other group III
nitrides) makes it a suitable material for spaceborne applications
such as solar cell arrays for satellites and high-power,
high-frequency devices for communication, weather, and surveillance
satellites
Wireless Base Stations: RF power transistors
Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs
Pressure Sensors:MEMS
Heat Sensors: Pyro-electric detectors
Power Conditioning: Mixed signal GaN/Si Integration
Automotive Electronics: High temperature electronics
Power Transmission Lines: High voltage electronics
Frame Sensors: UV detectors
Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65
eV to 3.4 eV (which is practically the entire solar spectrum),
making indium gallium nitride
(InGaN) alloys perfect for creating solar cell material. Because of
this advantage, InGaN solar cells grown on GaN substrates are
poised to become one of the most important new applications and
growth market for GaN substrate wafers.
Ideal for HEMTs, FETs
GaN Schottky diode project: We accept custom spec of Schottky
diodes fabricated on the HVPE-grown, free-standing gallium nitride
(GaN) layers of n- and p-types.
Both contacts (ohmic and Schottky) were deposited on the top
surface using Al/Ti and Pd/Ti/Au.
XRD Rocking Curves-GaN Material-TEST REPORT
A test report is necessary to show the compliance between custom
description and our final wafers data. We will test the wafer
characerization by equipment before shipment, testing surface
roughness by atomic force microscope, type by Roman spectra
instrument, resistivity by non-contact resistivity testing
equipment,micropipe density by polarizing microscope, orientation
by X-ray Orientator etc. if the wafers meet the requirement, we
will clean and pack them in 100 class clean room, if the wafers do
not match the custom spec, we will take it off.
The half-height full width (FWHM) is an expression of the range of
functions given by the difference between two extreme values of the
independent variable equal to half of its maximum. In other words,
it is the width of the spectral curve measured between those points
on the Y-axis, which is half the maximum amplitude.
Below is an example of XRD Rocking Curves of GaN Material:
XRD Rocking Curves of GaN Material
