4 Inch Freestanding GaN Substrates As III-Nitride Semiconductor
Materials
PAM-XIAMEN has established the manufacturing technology for
freestanding (Gallium Nitride)GaN substrate wafer which is for
UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE)
technology,Our GaN substrate has low defect density and less or
free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials
including GaN substrates of various orientations and electrical
conductivity,crystallineGaN&AlN templates, and custom III-N
epiwafers.
Here Shows Detail Specification:
4inch Freestanding GaN Substrates
| Item | PAM-FS-GaN100-U |
| Dimension | Φ100mm ±1mm |
| Thickness | 500-650 µm |
| Useable Surface Area | > 90% |
| Orientation | C-plane(0001) |
| Orientation Flat | (1-100) ±0.50,30±1mm |
| Secondary Orientation Flat | (11-20)±30,15±1mm |
| TTV(Total Thickness Variation) | ≤50µm |
| Conduction Type | Undoped |
| Resistivity (300K) | < 0.5 Ω·cm |
| Dislocation Density | Less than 5x106cm-2 |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Package | each in single wafer container, under nitrogen atmosphere, packed
in class 100 clean room |
4inch Freestanding GaN Substrates
The growing demand for high-speed, high-temperature and high
power-handling capabilities has made the semiconductor industry
rethink the choice of materials used as semiconductors. For
instance, as various faster and smaller computing devices arise,
the use of silicon is making it difficult to sustain Moore’s Law.
But also in power electronics, the properties of silicon are no
longer sufficient to allow further improvements in conversion
efficiency.
Due to its unique characteristics (high maximum current, high
breakdown voltage, and high switching frequency), Gallium Nitride
(or GaN) is the unique material of choice to solve energy problems
of the future. GaN based systems have higher power efficiency, thus
reducing power losses, switch at higher frequency, thus reducing
size and weight.
Zinc Blende crystal structure
| | Remarks | Referens |
| Energy gaps, Eg | 3.28 eV | 0 K | Bougrov et al. (2001) |
| Energy gaps, Eg | 3.2 eV | 300 K |
| Electron affinity | 4.1 eV | 300 K |
| Conduction band | | | |
| Energy separation between Γ valley and X valleys EΓ | 1.4 eV | 300 K | Bougrov et al. (2001) |
| Energy separation between Γ valley and L valleys EL | 1.6 ÷ 1.9 eV | 300 K |
| Effective conduction band density of states | 1.2 x 1018 cm-3 | 300 K |
| Valence band | | |
| Energy of spin-orbital splitting Eso | 0.02 eV | 300 K |
| Effective valence band density of states | 4.1 x 1019 cm-3 | 300 K |
Band structure for Zinc Blende GaN
 | Band structure of zinc blende(cubic) GaN. Important minima of the conduction band and maxima of the valence
band.
300K; Eg=3.2 eVeV; EX= 4.6 eV; EL= 4.8-5.1 eV; Eso = 0.02 eV
For details see Suzuki, Uenoyama & Yanase (1995) . |
 | Brillouin zone of the face centered cubic lattice, the Bravais
lattice of the diamond and zincblende structures. |
