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N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

    Buy cheap N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive from wholesalers
     
    Buy cheap N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive from wholesalers
    • Buy cheap N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive from wholesalers

    N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

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    Brand Name : Hua Xuan Yang
    Model Number : 5N20DY TO-252
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

    N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive


    Mosfet Power Transistor Description


    The AP50N20D uses advanced trench

    technology to provide excellent RDS(ON) and low gate charge .

    The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other


    Mosfet Power Transistor General Features


    V DS =200V,I D =5A
    R DS(ON) <520mΩ @ V GS =4.5V


    Mosfet Power Transistor Application


    Load switching

    Hard switched and high frequency circuits Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    5N20DTO-2525N20D3000
    5N20YTO-2515N20Y4000

    Absolute Maximum Ratings (TA=25℃unless otherwise noted)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS200V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID5A
    Drain Current-Pulsed (Note 1)IDM20A
    Maximum Power DissipationPD30W
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150

    Thermal Characteristic


    Thermal Resistance,Junction-to-Ambient (Note 2)RθJA4.17℃/W

    Electrical Characteristics (TA=25℃unless otherwise noted)


    ParameterSymbolConditionMinTypMaxUnit
    Off Characteristics
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA200--V
    Zero Gate Voltage Drain CurrentIDSSVDS=200V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
    On Characteristics (Note 3)
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=250μA1.21.72.5V
    Drain-Source On-State ResistanceRDS(ON)VGS=10V, ID=2A-520580mΩ
    Forward TransconductancegFSVDS=15V,ID=2A-8-S
    Dynamic Characteristics (Note4)
    Input CapacitanceClss

    VDS=25V,VGS=0V, F=1.0MHz

    -580-PF
    Output CapacitanceCoss-90-PF
    Reverse Transfer CapacitanceCrss-3-PF
    Switching Characteristics (Note 4)
    Turn-on Delay Timetd(on)

    VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω

    -10-nS
    Turn-on Rise Timetr-12-nS
    Turn-Off Delay Timetd(off)-15-nS
    Turn-Off Fall Timetf-15-nS
    Total Gate ChargeQg

    VDS=100V,ID=2A, VGS=10V

    -12nC
    Gate-Source ChargeQgs-2.5-nC
    Gate-Drain ChargeQgd-3.8-nC
    Drain-Source Diode Characteristics
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=2A--1.2V
    Diode Forward Current (Note 2)IS--5A

    Notes:

    1. Repetitive Rating: Pulse width limited by maximum junction temperature.
    2. Surface Mounted on FR4 Board, t ≤ 10 sec.
    3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
    4. Guaranteed by design, not subject to production


    Symbol

    Dimensions In MillimetersDimensions In Inches
    Min.Max.Min.Max.
    A2.2002.4000.0870.094
    A10.0000.1270.0000.005
    b0.6600.8600.0260.034
    c0.4600.5800.0180.023
    D6.5006.7000.2560.264
    D15.1005.4600.2010.215
    D20.483 TYP.0.190 TYP.
    E6.0006.2000.2360.244
    e2.1862.3860.0860.094
    L9.80010.4000.3860.409
    L12.900 TYP.0.114 TYP.
    L21.4001.7000.0550.067
    L31.600 TYP.0.063 TYP.
    L40.6001.0000.0240.039
    Φ1.1001.3000.0430.051
    θ
    h0.0000.3000.0000.012
    V5.350 TYP.0.211 TYP.

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