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4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

    Buy cheap 4N60 -R 4A, 600V	N-CHANNEL POWER MOSFET from wholesalers
     
    Buy cheap 4N60 -R 4A, 600V	N-CHANNEL POWER MOSFET from wholesalers
    • Buy cheap 4N60 -R 4A, 600V	N-CHANNEL POWER MOSFET from wholesalers
    • Buy cheap 4N60 -R 4A, 600V	N-CHANNEL POWER MOSFET from wholesalers

    4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

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    Brand Name : Hua Xuan Yang
    Model Number : 4N60
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

    2N60-TC3 Power MOSFET

    2A, 600V N-CHANNEL POWER MOSFET


    DESCRIPTION

    The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.



    FEATURES

    * RDS(ON) < 2.5Ω @VGS = 10 V

    * Fast Switching Capability

    * Avalanche Energy Specified

    * Improved dv/dt Capability, high Ruggedness


    ORDERING INFORMATION

    Ordering NumberPackagePin AssignmentPacking
    Lead FreeHalogen Free123
    4N60L-TF1-T4N60G-TF1-TTO-220F1GDSTube

    Note: Pin Assignment: G: Gate D: Drain S: Source


    n ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)


    PARAMETERSYMBOLRATINGSUNIT
    Drain-Source VoltageVDSS600V
    Gate-Source VoltageVGSS±30V
    Avalanche Current (Note 2)IAR4A
    Drain CurrentContinuousID4.0A
    Pulsed (Note 2)IDM16A
    Avalanche EnergySingle Pulsed (Note 3)EAS160mJ
    Peak Diode Recovery dv/dt (Note 4)dv/dt4.5V/ns
    Power DissipationPD36W
    Junction TemperatureTJ+150°С
    Operating TemperatureTOPR-55 ~ +150°С
    Storage TemperatureTSTG-55 ~ +150°С

    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

    Absolute maximum ratings are stress ratings only and functional device operation is not implied.

    4. Repetitive Rating: Pulse width limited by maximum junction temperature.

    5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

    6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

    THERMAL DATA

    PARAMETERSYMBOLRATINGSUNIT
    Junction to AmbientθJA62.5°С/W
    Junction to CaseθJc3.47°С/W

    ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)


    PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250μA600V
    Drain-Source Leakage CurrentIDSSVDS=600V, VGS=0V10μA
    VDS=480V, TC=125°С100µA
    Gate-Source Leakage CurrentForwardIGSSVGS=30V, VDS=0V100nA
    ReverseVGS=-30V, VDS=0V-100nA
    Breakdown Voltage Temperature Coefficient△BVDSS/△TJID=250μA,Referenced to 25°C0.6V/°С
    ON CHARACTERISTICS
    Gate Threshold VoltageVGS(TH)VDS=VGS, ID=250μA3.05.0V
    Static Drain-Source On-State ResistanceRDS(ON)VGS=10 V, ID=2.2A2.32.5
    DYNAMIC CHARACTERISTICS
    Input CapacitanceCISS

    VDS =25V, VGS=0V, f =1MHz

    440670pF
    Output CapacitanceCOSS50100pF
    Reverse Transfer CapacitanceCRSS6.820pF
    SWITCHING CHARACTERISTICS
    Turn-On Delay TimetD(ON)

    VDD=30V, ID=0.5A, RG=25Ω

    (Note 1, 2)

    4560ns
    Turn-On Rise TimetR3555ns
    Turn-Off Delay TimetD(OFF)6585ns
    Turn-Off Fall TimetF4060ns
    Total Gate ChargeQGVDS=50V, ID=1.3A, ID=100μA VGS=10V (Note 1, 2)1530nC
    Gate-Source ChargeQGS5nC
    Gate-Drain ChargeQGD15nC
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Drain-Source Diode Forward VoltageVSDVGS=0V, IS=4.4A1.4V
    Maximum Continuous Drain-Source Diode Forward CurrentIS4.4A

    Maximum Pulsed Drain-Source Diode

    Forward Current

    ISM17.6A
    Reverse Recovery Timetrr

    VGS=0 V, IS=4.4A,

    dIF/dt=100 A/μs (Note 1)

    250ns
    Reverse Recovery ChargeQRR1.5μC

    Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

    • Essentially independent of operating temperature.


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