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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

    Buy cheap 2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150 from wholesalers
     
    Buy cheap 2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150 from wholesalers
    • Buy cheap 2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150 from wholesalers

    2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 2N3904
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    2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

    SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN).


    FEATURE

    Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier applications

    Ÿ As complementary type, the PNP transistor 2N3906 is Recommended

    Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3904



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    2N3904TO-92Bulk1000pcs/Bag
    2N3904-TATO-92Tape2000pcs/Box

    MAXIMUM RATINGS (Ta=25Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector-Base Voltage60V
    VCEOCollector-Emitter Voltage40V
    VEBOEmitter-Base Voltage6V
    ICCollector Current -Continuous0.2A
    PCCollector Power Dissipation0.625W
    TJJunction Temperature150Š
    TstgStorage Temperature-55-150Š

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=10µA, IE=060V
    Collector-emitter breakdown voltageV(BR)CEOIC= 1mA , IB=040V
    Emitter-base breakdown voltageV(BR)EBOIE= 10µA, IC=06V
    Collector cut-off currentICBOVCB=60V, IE=00.1µA
    Collector cut-off currentICEXVCE=30V, VEB(off)=3V0.05µA
    Emitter cut-off currentIEBOVEB= 5V, IC=00.1µA

    DC current gain

    hFE1VCE=1V, IC=10mA100400
    hFE2VCE=1V, IC=50mA60
    hFE3VCE=1V, IC=100mA30
    Collector-emitter saturation voltageVCE(sat)IC=50mA, IB=5mA0.3V
    Base-emitter saturation voltageVBE(sat)IC=50mA, IB=5mA0.95V
    Transition frequencyfTVCE=20V,IC=10mA,f=100MHz300MHZ
    Delay Timetd

    VCC=3V,VBE=0.5V,

    IC=10mA,IB1=1mA

    35ns
    Rise Timetr35ns
    Storage Timets

    VCC=3V, IC=10mA

    IB1=IB2=1mA

    200ns
    Fall Timetf50ns

    CLASSIFICATION OF hFE1

    RankOYG
    Ra nge100-200200-300300-400



    Typical Characteristics




    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015





    SOT-89-3L Suggested Pad Layout


    TO-92 Suggested Pad Layout



    TO-92 7DSH DQG 5HHO


    Quality 2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150 for sale
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