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MMBT4403 NPN High Speed Switching Transistor High Performance 

    Buy cheap MMBT4403 NPN High Speed Switching Transistor High Performance  from wholesalers
     
    Buy cheap MMBT4403 NPN High Speed Switching Transistor High Performance  from wholesalers
    • Buy cheap MMBT4403 NPN High Speed Switching Transistor High Performance  from wholesalers

    MMBT4403 NPN High Speed Switching Transistor High Performance 

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : MMBT4403
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    MMBT4403 NPN High Speed Switching Transistor High Performance 

    SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN)


    FEATURE

    Switching Transistor

    Marking :2T


    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

    SymbolParameterValueUnit
    VCBOCollector-Base Voltage-40V
    VCEOCollector-Emitter Voltage-40V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current-600mA
    PCCollector Power Dissipation300mW
    RΘJAThermal Resistance From Junction To Ambient417℃/W
    TjJunction Temperature150
    TstgStorage Temperature-55~+150




    ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)


    ParameterSymbolTest ConditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=-100μA,IE=0-40V
    Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-40V
    Emitter-base breakdown voltageV(BR)EBOIE=-100μA ,IC=0-5V
    Collector cut-off currentICBOVCB=-35V,IE=0-0.1μA
    Collector cut-off currentICEXVCE=-35V, VBE=0.4V-0.1μA
    Emitter cut-off currentIEBOVEB=-4V,IC=0-0.1μA

    DC current gain

    hFE1VCE=-1V, IC=-0.1mA30
    hFE2VCE=-1V, IC=-1mA60
    hFE3VCE=-1V, IC=-10mA100
    hFE4VCE=-2V, IC=-150mA100300
    hFE5VCE=-2V, IC=-500mA20

    Collector-emitter saturation voltage


    VCE(sat)

    IC=-150mA,IB=-15mA-0.4V
    IC=-500mA,IB=-50mA-0.75V

    Base-emitter saturation voltage


    VBE(sat)

    IC=-150mA,IB=-15mA-0.95V
    IC=-500mA,IB=-50mA-1.3V
    Transition frequencyfTVCE=-10V, IC=-20mA,f =100MHz200MHz
    Delay timetd

    VCC=-30V, VBE(off)=-0.5V

    IC=-150mA , IB1=-15mA

    15ns
    Rise timetr20ns
    Storage timets

    VCC=-30V, IC=-150mA

    IB1=IB2=-15mA

    225ns
    Fall timetf60ns






    Typical Characterisitics






    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A0.9001.1500.0350.045
    A10.0000.1000.0000.004
    A20.9001.0500.0350.041
    b0.3000.5000.0120.020
    c0.0800.1500.0030.006
    D2.8003.0000.1100.118
    E1.2001.4000.0470.055
    E12.2502.5500.0890.100
    e0.950 TYP0.037 TYP
    e11.8002.0000.0710.079
    L0.550 REF0.022 REF
    L10.3000.5000.0120.020
    θ






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