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2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

    Buy cheap 2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit from wholesalers
     
    Buy cheap 2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit from wholesalers
    • Buy cheap 2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit from wholesalers

    2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 2SA1015
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    2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

    SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP)


    FEATURE

    Ÿ Power dissipation


    MARKING

    A1015=Device code

    Solid dot=Green molding compound device, if none,the normal device

    Y=Rank of hFE, XXX=Code


    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    2SA1015TO-92Bulk10000
    2SA1015-TATO-92Tape2000

    MAXIMUM RATINGS (Ta=25Š unless otherwise noted)


    SymbolPara meterValueUnit
    VCBOCollector-Base Voltage-50V
    VCEOCollector-Emitter Voltage-50V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current -Continuous-150mA
    PDCollector Power Dissipation400mW
    R0 JAThermal Resist ance from Junction to Ambient312Š / W
    TjJunction Temperature150Š
    TstgSt orage Temperature-55 ~+150Š

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= -100µA, IE=0-50V
    Collector-emitter breakdown voltageV(BR)CEOIC= -0.1mA, IB=0-50V
    Emitter-base breakdown voltageV(BR)EBOIE= -100µA, IC=0-5V
    Collector cut-off currentICBOVCB= -50V,IE=0-0.1µA
    Collector cut-off currentICEOVCE= -50V, IB=0-0.1µA
    Emitter cut-off currentIEBOVEB= -5V, IC=0-0.1µA
    DC current gainhFEVCE= -6V, IC= -2mA70700
    Collector-emitter saturation voltageVCE(sat)IC= -100mA, IB= -10mA-0.3V
    Base-emitter saturation voltageVBE(sat)IC= -100mA, IB= -10mA-1.1V
    Transition frequencyfTVCE= -10 V, IC= -1mA f =30MHz80MHz
    Collector output capacitanceCobVCB=-10V,IE=0,f=1MHz7pF
    Noise figureNFVCE= -6 V, IC= -0.1mA, f =1kHz,RG=10kK6dB

    CLASSIFICATION OF hFE1

    RankOYGRBL
    Range70-140120-240200-400350-700



    Typical Characteristics



    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015





    SOT-89-3L Suggested Pad Layout


    TO-92 Suggested Pad Layout



    TO-92 7DSH DQG 5HHO


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