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| Brand Name : | VISHAY |
| Model Number : | IRF9640 |
| Price : | Negotiation |
| Payment Terms : | T/T, Western Union , ESCROW |
| Supply Ability : | 50000PCS |
| Delivery Time : | STOCK |
IRF9640 General Purpose Rectifier Diode P-Channel 200V 11A (Tc) 125W (Tc) Through Hole
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness. The TO-220AB
package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The
low thermal resistance and low package cost of the TO-220AB
contribute to its wide acceptance throughout the industry.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |


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