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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

    Buy cheap MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4 from wholesalers
     
    Buy cheap MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4 from wholesalers
    • Buy cheap MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4 from wholesalers
    • Buy cheap MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4 from wholesalers

    MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

    Ask Lasest Price
    Brand Name : Freescale
    Model Number : MRFE6VP6300HR5
    Certification : IEC
    Price : negotiable
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000 pieces per year
    Delivery Time : 1-2 working days
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    MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

    MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4


    These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz


    Features

    • Unmatched Input and Output Allowing Wide Frequency Range Utilization

    • Device can be used Single--Ended or in a Push--Pull Configuration

    • Qualified Up to a Maximum of 50 VDD Operation

    • Characterized from 30 V to 50 V for Extended Power Range

    • Suitable for Linear Application with Appropriate Biasing

    • Integrated ESD Protection

    • Greater Negative Gate--Source Voltage Range for Improved Class C Operation

    • Characterized with Series Equivalent Large--Signal Impedance Parameters

    • RoHS Compliant

    • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.

    • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.


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