RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO

Description

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power

Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. 

The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstock inventory for major distributors such as Future Electronics and contract manufacturers as Flextronics. Koben has since then added sourcing of high quality components from local manufacturers in China.

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