SiC Cantilever Paddle with CVD Coating for Horizontal Boat
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A Silicon Carbide (SiC) Cantilever Paddle is a high-performance
ceramic structural component manufactured using reaction-bonded
silicon carbide (RBSiC) process. It is primarily designed for
carrying and transporting wafers in high-temperature process
environments within the semiconductor and photovoltaic
industries. It operates reliably in atmospheres containing
oxygen, nitrogen, and trace hydrogen chloride, withstanding
temperatures of approximately 1250°C for long-term stable
operation. Leveraging the exceptional material properties of
silicon carbide—extremely high hardness, high flexural strength,
low coefficient of thermal expansion, excellent thermal stability,
and chemical inertness—the cantilever paddle ensures uniform
heating, prevention of deformation, and reduction of contamination
and particle generation in wafers under high temperatures. It
significantly extends service life, increases load capacity and
production efficiency, and reduces overall maintenance costs. Its
lightweight design and high surface smoothness also support
precise automated robotic handling, meeting high-precision process
requirements.
SiC Cantilever Paddle Key Parameters
The following are the core performance parameters of silicon
carbide cantilever paddles, directly related to their material
characteristics, functions, and applications:
| Parameter Category | Parameter Name | Typical Value/Range |
Material Characteristics
| Material Purity | SiC > 99.999%
|
| Coefficient of Thermal Expansion | ~4.5×10⁻⁶/°C
|
| Flexural Strength | >2500 MPa
|
| Maximum Operating Temperature | 1350°C (long-term)
|
| Mohs Hardness | 9
|
| Density | 3.02 g/cm³
|
Functional Characteristics
| Surface Smoothness | High (specific value not provided)
|
| Corrosion Resistance | Resists acids, alkalis, and plasma erosion
|
Application Characteristics
| Working Atmosphere | Oxygen, nitrogen, hydrogen chloride, etc.
|
| Service Life | 35 times longer than metal/quartz
|
SiC Cantilever Paddle Features
3D printing integrated forming.
Base material impurity content <300 ppm.
CVD silicon carbide coating base material impurity content <5
ppm.
High load-bearing capacity at high temperatures.
High thermal shock stability.
SiC Cantilever Paddle Applications
Photovoltaic Industry: Used in TOPCon cell production processes such as LPCVD and
PECVD to carry silicon wafers for doping and passivation layer
deposition. Also employed in diffusion furnaces for
high-temperature oxidation and annealing of silicon wafers,
enhancing cell conversion efficiency.
- Semiconductor Manufacturing: Serves as a core component of wafer carriers in processes like
chemical vapor deposition (CVD) and etching, ensuring process
stability and yield.
- New Energy Material Preparation: Used in high-temperature crystal growth furnaces for silicon
carbide single crystal growth, supporting SiC ingots and
resisting molten silicon corrosion environments.
- Other Industrial Fields: Functions as high-temperature supports in applications such as
ceramic sintering and glass melting.
SiC Cantilever Paddle Q&A
Q1: What is a silicon carbide cantilever paddle and what is it used
for?
A1: A silicon carbide cantilever paddle is a high-performance
ceramic component used primarily in semiconductor and
photovoltaic manufacturing to carry and transport wafers in
high-temperature processes like LPCVD and diffusion, ensuring
precise handling and minimal contamination under extreme conditions
(up to 1350°C).
Q2: Why choose silicon carbide for cantilever paddles over
traditional materials?
A2: Silicon carbide offers exceptional thermal stability (low
CTE ~4.5×10⁻⁶/℃), high hardness (Mohs 9), and mechanical strength
(>2500 MPa), enabling longer service life (3-5x longer than
quartz), reduced maintenance costs, and superior performance in
corrosive and high-temperature environments.
Tags: #SiC Cantilever Paddle, #CVD Coating, #High-Purity,
#Customized, #SiC Ceramics, #Horizontal Boat Loading, #Wafer
Carriers
