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Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

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Brand Name :	zmsh
Model Number :	Silicon Carbide Chips
Payment Terms :	T/T
Delivery Time :	2-4 weeks

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Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

Product Description

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

A silicon carbide chip is a semiconductor device made of silicon carbide (SiC) material. It takes advantage of the excellent physical and chemical properties of silicon carbide to exhibit excellent performance in high-temperature, high-pressure and high-frequency environments.

Features

• High hardness and wear resistance: Silicon carbide has high hardness and excellent wear resistance, which can resist surface wear and extend service life.

• High strength: Able to withstand high loads and high mechanical stress, suitable for use in high load and high strain environments.

• High thermal stability: Silicon carbide has excellent thermal stability, small coefficient of thermal expansion, high thermal conductivity, can withstand stress and thermal shock at high temperatures, and the ultimate working temperature can reach more than 600°C.

• Wide bandgap bandgap: SiC's wide bandgap allows it to perform well in high-temperature and high-voltage environments, making it suitable for high-power and high-temperature applications.

• High electron mobility: The high electron mobility allows the device to operate at high speeds and at high frequencies.

• High electron saturation rate: The electron saturation rate of silicon carbide is twice that of silicon, allowing silicon carbide devices to achieve higher operating frequencies and higher power densities.

• High breakdown electric field strength: Able to withstand high voltage operation, reducing size and weight.

• Chemical Stability: Extremely resistant to most acids, alkalis and oxidizing agents, and retains performance in harsh chemical environments.

Technical Parameters

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

Applications

• Power electronics: used to design high-efficiency, high-power-density switching power supplies, suitable for electric vehicles, solar inverters and other fields, to improve energy conversion efficiency and reduce system costs.

• Wireless communication: used to design high-frequency, high-speed RF power amplifiers, suitable for 5G communications, satellites, radar and other fields.

• LED Lighting: Used to design high-efficiency, high-brightness LED drivers, suitable for indoor and outdoor lighting and other fields.

• Automotive: It can be used to make more efficient and reliable electric vehicle drive systems and battery management systems.

• Aerospace: Silicon carbide chips can withstand harsh environments such as high temperatures and radiation to ensure the stable operation of the system.

FAQ

1. Q: What is 4H-P type silicon carbide substrate?

A: 4H-P type silicon carbide substrate is a P-type (cavity type) semiconductor material with 4H crystal type. With its excellent physical and chemical properties, such as high hardness, high thermal conductivity, high breakdown electric field, etc., it has a wide range of applications in power electronics, high-frequency devices and other fields.

2. Q: Do you offer custom services for 4H-P type silicon carbide substrates?

A: Yes, our company provides custom service for 4H-P type silicon carbide substrate. Customers can choose substrates with different specifications and parameters, such as diameter, thickness, doping concentration, etc., according to their specific needs to meet the requirements of specific applications.

Tag: #Silicon Carbide, #4H/6H/3C, #Semiconductor Devices.

Product Tags:

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Company Info.

SHANGHAI FAMOUS TRADE CO.,LTD

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Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

Product Description

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

A silicon carbide chip is a semiconductor device made of silicon carbide (SiC) material. It takes advantage of the excellent physical and chemical properties of silicon carbide to exhibit excellent performance in high-temperature, high-pressure and high-frequency environments.

Features

• High hardness and wear resistance: Silicon carbide has high hardness and excellent wear resistance, which can resist surface wear and extend service life.

• High strength: Able to withstand high loads and high mechanical stress, suitable for use in high load and high strain environments.

• High thermal stability: Silicon carbide has excellent thermal stability, small coefficient of thermal expansion, high thermal conductivity, can withstand stress and thermal shock at high temperatures, and the ultimate working temperature can reach more than 600°C.

• Wide bandgap bandgap: SiC's wide bandgap allows it to perform well in high-temperature and high-voltage environments, making it suitable for high-power and high-temperature applications.

• High electron mobility: The high electron mobility allows the device to operate at high speeds and at high frequencies.

• High electron saturation rate: The electron saturation rate of silicon carbide is twice that of silicon, allowing silicon carbide devices to achieve higher operating frequencies and higher power densities.

• High breakdown electric field strength: Able to withstand high voltage operation, reducing size and weight.

• Chemical Stability: Extremely resistant to most acids, alkalis and oxidizing agents, and retains performance in harsh chemical environments.

Technical Parameters

Applications

• Power electronics: used to design high-efficiency, high-power-density switching power supplies, suitable for electric vehicles, solar inverters and other fields, to improve energy conversion efficiency and reduce system costs.

• Wireless communication: used to design high-frequency, high-speed RF power amplifiers, suitable for 5G communications, satellites, radar and other fields.

• LED Lighting: Used to design high-efficiency, high-brightness LED drivers, suitable for indoor and outdoor lighting and other fields.

• Automotive: It can be used to make more efficient and reliable electric vehicle drive systems and battery management systems.

• Aerospace: Silicon carbide chips can withstand harsh environments such as high temperatures and radiation to ensure the stable operation of the system.

Related product:

FAQ

1. Q: What is 4H-P type silicon carbide substrate?

2. Q: Do you offer custom services for 4H-P type silicon carbide substrates?

Tag: #Silicon Carbide, #4H/6H/3C, #Semiconductor Devices.

3C Sic Silicon Carbide Semiconductor Devices

4H Sic Silicon Carbide Semiconductor Devices

6H Sic Silicon Carbide Semiconductor Devices

Sic Silicon Carbide Semiconductor Devices Multiple Crystal Forms 4H 6H 3C Custom Size 5G Communication Chips

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