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Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes

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Brand Name :	ZMSH
Model Number :	Germanium Substrates
Certification :	rohs
Payment Terms :	T/T
Delivery Time :	2-4 weeks

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Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes

Product Description

Ge germanium wafer semiconductor substrates <111> concentrating photovoltaic CPV custom size shapes

Germanium has good semiconductor properties. High-purity germanium is doped with trivalent elements (e.g., indium, gallium, boron) to obtain P-type germanium semiconductors, and pentavalent elements (e.g., antimony, arsenic, and phosphorus) doped to obtain N-type germanium semiconductors. They have high electron mobility and high hole mobility. High-quality germanium substrates can be used in concentrated photovoltaics (CPV), outer space solar panels, and high-brightness light-emitting diode (LED) applications.

Features

- The lattice constant is greater than that of silicon, which is conducive to the construction of heterostructures.

- The high electron mobility, about 3 times that of silicon, is conducive to the manufacture of high-speed electronic devices.

- The small bandgap width (0.67 eV) makes it suitable for infrared photoelectric detection and emission applications.

It is more sensitive to radiation and is suitable for radiation-sensitive electronic equipment.

The processing technology is relatively complex and the cost is high.

Technical Parameters

Applications

1. High-frequency analog and RF electronics: microwave diodes, transistors, integrated circuits; Electronic equipment in the microwave frequency band, such as radar and communications.

2. Infrared photoelectric detection and emission: infrared detector, thermal imager; Infrared emitting diodes, laser diodes.

3. Radiation Sensitive Electronic Equipment: Compound Semiconductor Heterostructure: Aerospace Avionics System; Nuclear power plants and electronic equipment in the military field.

4. Compound semiconductor heterostructure: substrate materials for III-V compounds such as GaAs, InP, etc.; Heterogeneous structure solar cells, laser diodes, etc.

Our services

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ

1. Q: How to pay?
A:100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade
Assurance on and etc..

2. Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications for your optical components
based on your needs.

3.Q: What's your MOQ?
A: (1) For inventory, the MOQ is 3pcs.
(2) For customized products, the MOQ is 25pcs up.

Product Tags:

CPV germanium wafer

custom size germanium wafer

semiconductor germanium wafer

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Company Info.

SHANGHAI FAMOUS TRADE CO.,LTD

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Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes

Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes

Ge Germanium Wafer Semiconductor Substrates <111> Concentrating Photovoltaic CPV Custom Size Shapes

Product Description

Ge germanium wafer semiconductor substrates <111> concentrating photovoltaic CPV custom size shapes

Features

- The lattice constant is greater than that of silicon, which is conducive to the construction of heterostructures.

- The high electron mobility, about 3 times that of silicon, is conducive to the manufacture of high-speed electronic devices.

- The small bandgap width (0.67 eV) makes it suitable for infrared photoelectric detection and emission applications.

It is more sensitive to radiation and is suitable for radiation-sensitive electronic equipment.

The processing technology is relatively complex and the cost is high.

Technical Parameters

Applications

1. High-frequency analog and RF electronics: microwave diodes, transistors, integrated circuits; Electronic equipment in the microwave frequency band, such as radar and communications.

2. Infrared photoelectric detection and emission: infrared detector, thermal imager; Infrared emitting diodes, laser diodes.

3. Radiation Sensitive Electronic Equipment: Compound Semiconductor Heterostructure: Aerospace Avionics System; Nuclear power plants and electronic equipment in the military field.

4. Compound semiconductor heterostructure: substrate materials for III-V compounds such as GaAs, InP, etc.; Heterogeneous structure solar cells, laser diodes, etc.