6Inch Silicon Carbide Semi-insulating SiC Composite Substrate P
Type N Type Single Polish Double Polish Production Grade
Semi-Insulating Silicon Carbide (SiC) composite substrate wafers
are a new type of substrate materials for power electronics and RF
microwave devices. Semi-insulating SiC composite substrates are
widely used in power electronics, high-frequency microwave devices,
optoelectronic devices and other fields. It is particularly
suitable for the manufacture of high-performance microwave
integrated circuits and power amplifiers. Compared with traditional
silicon substrates, semi-insulating SiC composite substrates have
higher insulation, thermal conductivity and mechanical strength,
providing an ideal material basis for the development of a new
generation of high-power, high-frequency electronic devices.
Features:
· High resistivity: Semi-insulating SiC wafers can reach resistivity
in the order of 10^8-10^10 Ω·cm. This extremely high resistivity
makes it possible to effectively isolate electronic devices from
interfering with each other.
· Low dielectric loss: Semi-Insulating SiC wafers have an extremely
low dielectric loss factor, typically less than 10^-4. This helps
to reduce the energy loss of the device when operating at high
frequencies.
· Excellent thermal conductivity: SiC materials have a high thermal
conductivity and can effectively conduct the heat generated by the
device. It helps to improve the thermal management performance of
the device and improve the operating stability.
· High mechanical strength: Semi-Insulating SiC wafers have high
hardness and flexural strength. It can withstand large mechanical
stresses and is suitable for manufacturing high-reliability
electronic devices.
· Good chemical stability: SiC materials have excellent chemical
stability in high-temperature, chemically corrosive environments.
It is beneficial to improve the service life of the device in harsh
environments.
· Good compatibility with Si: The lattice constant and coefficient
of thermal expansion of Semi-Insulating SiC wafers are similar to
those of silicon. It helps to simplify the device manufacturing
process and reduce manufacturing costs.
Technical Parameters:
Applications:
1. RF and microwave devices: Semi-Insulating SiC is ideal for
manufacturing RF and microwave integrated circuits due to its low
dielectric loss and high insulation. It can be applied to
high-frequency microwave fields such as mobile communication base
stations, radar systems, and satellite communications.
2. Power Electronics: Semi-Insulating SiC has excellent thermal
conductivity and high temperature characteristics, which is
beneficial for the fabrication of power semiconductor devices. It
can be used to manufacture high-power electronic devices such as
power amplifiers, switching power supplies, and power conversion.
3. Optoelectronics: Semi-Insulating SiC has radiation resistance and
can be used to manufacture photodetector devices that operate in a
radiation environment. It is used in aerospace, national defense
and other fields with strict requirements for radiation resistance.
Customization:
Our SiC substrate is available in the Semi-insulating type and is
RoHS certified. The minimum order quantity is 10pc and the price is
by case. The packaging details are customized plastic boxes. The
delivery time is within 30 days and we accept T/T payment terms.
Our supply ability is 1000pc/month. The SiC substrate size is 6
inch. Place of origin is China.
Our services:
1. Factory direct manufacture and sell.
2. Fast, accurate quotes.
3. Reply to you within 24 working hours.
4. ODM: Customized design is avaliable.
5. Speed and precious delivery.
