Silicon Carbide Seed wafer type 4H Dia 157±0.5mm thickness 500±50um
monocrystall area ＞153mm
4H Silicon Carbide Seed's abstract
In the field of silicon carbide (SiC) crystal growth,
production-grade SiC seed wafers are essential for creating
high-performance crystals. These wafers act as the starting
material for single-crystal SiC growth, used in high-temperature,
high-power electronic devices. Production-grade wafers must meet
strict criteria for surface uniformity, purity, and defect levels
to support the growth of defect-minimized SiC crystals. The use of
seed wafers ensures consistent crystal structures and is crucial in
power semiconductor devices like diodes and transistors.
High-quality seed wafers contribute to the efficiency and
durability of SiC components in various industries.
4H Silicon Carbide Seed's photo
4H Silicon Carbide Seed's properties
SiC seed wafers are specifically designed to withstand the high
temperatures required for SiC crysta growth. Processes
such as physical vapor transport (PVT) rely on temperatures
exceeding 2000°C, and the seed wafer must remain stable under these
extreme conditions. Production-grade wafers are engineered to have
exceptional thermal stability, which allows for consistent and
reliable crystal growth. This temperature resilience is crucial for
growing large, defect-free SiC crystals that are used in high-power
and high-temperature applications, such as electric vehicles,
aerospace systems, and renewable energy technologies. Wafers
optimized for high-temperature growth help reduce defects like
dislocations and micropipes, ensuring a higher yield of usable SiC
material.
4H Silicon Carbide Seed's applications
- Power Electronics
4H-SiC seed wafers are extensively used for growing SiC crystals
for high-performance power electronics. Devices made from 4H-SiC,
such as MOSFETs, Schottky diodes, and IGBTs, offer high energy
efficiency, lower switching losses, and the ability to operate at
high voltages and temperatures. These characteristics make them
ideal for applications in electric vehicles (EVs), renewable energy
systems (such as solar inverters and wind turbines), and industrial
power converters. 4H-SiC-based components improve overall energy
efficiency and durability, making them highly sought after in
modern power systems.
- High-Temperature and Harsh Environments
4H-SiC’s wide bandgap, high breakdown voltage, and excellent
thermal conductivity make it perfect for devices operating in
extreme environments. Applications such as aerospace systems, oil
and gas exploration, and military equipment benefit from
4H-SiC-based semiconductors because they can withstand high
temperatures, radiation, and harsh chemical exposure while
maintaining stable performance. Sensors, actuators, and other
electronic devices in these industries often rely on 4H-SiC
components for reliable operations.
- High-Frequency and RF Devices
4H-SiC seed wafers are used in the fabrication of high-frequency
and RF (radio frequency) devices. Due to its low loss at high
frequencies and high electron mobility, 4H-SiC is preferred for
high-frequency communication systems, radar, and satellite
communications. Devices built with 4H-SiC offer high efficiency and
lower power consumption, making them essential in telecommunication
infrastructure, aerospace, and defense industries where performance
and reliability are critical.
- LEDs and Optoelectronics
4H-SiC serves as a substrate for growing gallium nitride (GaN)
crystals, which are used in blue and ultraviolet (UV) LEDs and
laser diodes. These devices are essential in applications like
solid-state lighting, automotive lighting, and display
technologies. The high thermal conductivity and mechanical strength
of 4H-SiC provide a stable platform for GaN devices, enhancing
their efficiency and lifespan.
Specification
