FP epiwafer InP substrate contact layer InGaAsP Dia 2 3 4 inch for
OCT 1.3um wavelength band
FP epiwafer InP substrate's Brief
Fabry-Perot (FP) epiwafers on Indium Phosphide (InP) substrates are
key components in the development of optoelectronic devices,
particularly laser diodes used in optical communication and sensing
applications. InP substrates provide an ideal platform due to their
high electron mobility, direct bandgap, and excellent lattice
matching for epitaxial growth. These wafers typically feature
multiple epitaxial layers, such as InGaAsP, that form the FP laser
cavity and are designed to emit light in the critical 1.3 μm to
1.55 μm wavelength bands, making them highly effective for
fiber-optic communication.
FP lasers, grown on these epiwafers, are known for their relatively
simple structure compared to other laser types, like Distributed
Feedback (DFB) lasers, which makes them a cost-effective solution
for many applications. These lasers are widely used in
short-to-medium range optical communication systems, data center
interconnects, and sensing technologies such as gas detection and
medical diagnostics.
InP-based FP epiwafers provide flexibility in wavelength selection,
good performance, and lower production costs, making them a vital
component in the growing fields of telecommunications,
environmental monitoring, and integrated photonic circuits.
FP epiwafer InP substrate's data sheet
FP epiwafer InP substrate's diagram
FP epiwafer InP substrate's properties
InP Substrate
- Lattice Constant: 5.869 Å, providing excellent lattice matching
with materials like InGaAsP, minimizing defects in epitaxial
layers.
- Direct Bandgap: 1.344 eV (corresponding to ~0.92 μm emission
wavelength), ideal for optoelectronic applications, especially in
the infrared spectrum.
- High Electron Mobility: 5400 cm²/V·s, enabling high-speed,
high-frequency device performance, crucial for communication
technologies.
- Thermal Conductivity: 0.68 W/cm·K, providing adequate heat
dissipation for devices like lasers.
Epitaxial Layers
- Active Region: Typically made from InGaAsP or related compounds,
these layers emit light in the 1.3 μm to 1.55 μm wavelength bands,
essential for fiber-optic communication.
- Multiple Quantum Wells: These may be used to enhance the
performance of the FP laser, improving efficiency and modulation
speeds.
- Doping: The epitaxial layers are doped (n-type or p-type) to
facilitate charge injection and ensure low-resistance ohmic
contacts.
Optical Properties
- Emission Wavelength: Typically in the 1.3 μm to 1.55 μm range,
these are the ideal wavelengths for telecom applications due to
low-loss transmission in optical fibers.
- Reflective Facets: FP lasers use naturally reflective facets to
form the laser cavity, simplifying fabrication and reducing costs.
Cost-Effectiveness
- FP epiwafers on InP substrates offer a simpler structure compared
to more complex laser types (e.g., DFB lasers), reducing
manufacturing costs while maintaining good performance for
short-to-medium range communication.
These properties make FP epiwafers on InP substrates highly
suitable for use in optical communication systems, sensing devices,
and photonic integrated circuits.
| Property | Description |
| Crystal Structure | Zinc-blende crystal structure |
| Lattice Constant | 5.869 Å - Matches well with InGaAs and InGaAsP, minimizing defects |
| Bandgap | 1.344 eV at 300 K, corresponding to ~0.92 μm emission wavelength |
| Epiwafer Emission Range | Typically in the 1.3 μm to 1.55 μm range, suitable for optical
communication |
| High Electron Mobility | 5400 cm²/V·s, enabling high-speed, high-frequency device
applications |
| Thermal Conductivity | 0.68 W/cm·K at room temperature, provides adequate heat dissipation |
| Optical Transparency | Transparent above its bandgap, allowing efficient photon emission
in the IR range |
| Doping and Conductivity | Can be doped as n-type (sulfur) or p-type (zinc), supports ohmic
contacts |
| Low Defect Density | Low defect density, improves efficiency, longevity, and reliability
of devices |
FP epiwafer InP substrate's application
Fiber Optic Communication
- Laser Diodes: FP lasers on InP epiwafers are widely used in fiber
optic communication systems, particularly in short to medium-range
data transmission. They operate in the 1.3 μm to 1.55 μm wavelength
range, which corresponds to the low-loss windows of optical fibers,
making them ideal for high-speed data transmission.
- Transceivers and Optical Modules: FP lasers are commonly integrated
into optical transceivers used in data centers and
telecommunication networks to transmit and receive optical signals.
Data Center Interconnects
- High-Speed Connectivity: InP-based FP lasers are utilized in data
centers for interconnects between servers and network devices,
providing high-speed, low-latency optical links essential for
handling large volumes of data.
Optical Sensing
- Gas Detection: FP lasers can be tuned to specific wavelengths to
detect gases such as CO2, CH4, and other industrial or
environmental pollutants through infrared absorption.
- Environmental Monitoring: FP lasers on InP substrates are employed
in sensors for air quality monitoring, detecting hazardous gases,
and industrial safety systems.
Medical Diagnostics
- Optical Coherence Tomography (OCT): InP-based lasers are used in
OCT systems for non-invasive imaging, commonly applied in
ophthalmology for detailed retinal scans and in dermatology for
tissue imaging.
FP epiwafer InP substrate's photos
Q&A
What is EPI in wafer?
EPI in wafer technology stands for Epitaxy, which refers to the process of depositing a thin layer of
crystalline material (epitaxial layer) onto a semiconductor
substrate (such as silicon or InP). This epitaxial layer has the
same crystallographic structure as the underlying substrate,
allowing for high-quality, defect-free growth that is essential for
the fabrication of advanced semiconductor devices.
