SiC Ingot, Silicon Carbide Ingot, SiC raw Ingot, Silicon Carbide
raw Ingot, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch
SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About 4H-N SiC Ingot
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature
environments.
- wide bandgap characteristics, suitable for high-frequency,
high-power electronic devices.
Description of SiC Ingot
SiC ingot (Silicon Carbide Ingot) is a high-purity crystal made of
silicon carbide material, which is widely used in high-power
electronic devices and semiconductor industry.
SiC ingots are usually grown by methods such as physical vapor
transport (PVT) or chemical vapor deposition (CVD), and have
extremely high thermal conductivity, wide bandgap and excellent
chemical stability.
These characteristics make SiC ingots particularly suitable for the
manufacture of electronic devices that require high-speed
switching, high temperature and high voltage operation.
The growth process of SiC ingots is complex and strictly controlled
to ensure the high quality and low defect rate of the crystal.
Due to its excellent thermal and electrical properties, SiC ingots
have wide application potential in energy conservation, electric
vehicles, renewable energy and aerospace.
In addition, the hardness of SiC ingots is extremely high, close to
that of diamonds, which requires specialized equipment and
technology during cutting and processing.
Overall, SiC ingots represent an important direction for the
development of high-performance electronic device materials in the
future.
SiC Ingot to SiC Substrate
The ingot is first grown through a high-temperature melting and
cooling process and then processed into a substrate through
processes such as cutting and polishing.
Substrates are the basic materials in the manufacture of
semiconductor devices and are used to make various electronic
components.
Therefore, silicon carbide ingots are the key raw materials for
producing silicon carbide substrate.
Details of SiC Ingot
| Item | Specification |
| Diameter | 150 mm |
| SiC Polytype | 4H-N |
| SiC Resistivity | ≥1E8 Ω·cm |
| Transfer SiC layer Thickness | ≥0.1 μm |
| Void | ≤5 ea/wafer (2 mm > D > 0.5 mm) |
| Front roughness | Ra ≤ 0.2 nm (5 μm × 5 μm) |
| Orientation | <111>/<100>/<110> |
| Type | P/N |
| Flat/Notch | Flat/Notch |
| Edge Chip, Scratch, Crack (visual inspection) | None |
| TTV | ≤5 μm |
| Thickness | 15mm |
Other pictures of SiC Ingot
*Please feel free to reach out to us if you have customized
demands.
About us
Our enterprise, ZMSH, specialises in the research, production,
processing, and sales of Semiconductor substrates and optical
crystal materials.
We have an experienced engineering team, management expertise,
precision processing equipment, and testing instruments, providing
us with extremely strong capabilities in processing non-standard
products.
We can research, develop, and design various new products according
to customer needs.
The company will adhere to the principle of "customer-centred,
quality-based" and strive to become a top-tier high-tech enterprise
in the field of optoelectronic materials.
